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Interband and Intersubband Optical Transition Matrix Elements of Ge/Gesisn Quantum Well

The interband and intersubband optical transition matrix elements of a tensile-strained Ge/GeSiSn quantum well are investigated by using an 8-band k·p method. For conduction to valence band interband optical transition, the S→X,Y,Z transitions are dominant. For intersubband optical transition includ...

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Main Author: W. J., Fan
Format: E-Article
Published: ENCON 2013 2013
Subjects:
Q Science (General)
Online Access:http://ir.unimas.my/id/eprint/8162/
http://rpsonline.com.sg/proceedings/9789810760595/html/015.xml
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spelling my.unimas.ir.81622015-07-02T06:21:49Z http://ir.unimas.my/id/eprint/8162/ Interband and Intersubband Optical Transition Matrix Elements of Ge/Gesisn Quantum Well W. J., Fan Q Science (General) The interband and intersubband optical transition matrix elements of a tensile-strained Ge/GeSiSn quantum well are investigated by using an 8-band k·p method. For conduction to valence band interband optical transition, the S→X,Y,Z transitions are dominant. For intersubband optical transition including the conduction to conduction band and the valence to valence band transitions, the S→X,Y,Z transitions and X,Y,Z →S transitions are significant due to the strong interaction between the conduction band and valence band, and the S, X,Y,Z → S,X,Y,Z transitions are greatly depressed, which are completely different with the results of single band effective mass approximation. The results will be helpful to design optoelectronic devices, such as Laser and LED diodes, photodetector, and solar cell. ENCON 2013 2013 E-Article PeerReviewed W. J., Fan (2013) Interband and Intersubband Optical Transition Matrix Elements of Ge/Gesisn Quantum Well. ENCON 2013. http://rpsonline.com.sg/proceedings/9789810760595/html/015.xml doi: 10.3850/978-981-07-6059-5_015
institution Universiti Malaysia Sarawak
building Centre for Academic Information Services (CAIS)
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Sarawak
content_source UNIMAS Institutional Repository
url_provider http://ir.unimas.my/
topic Q Science (General)
spellingShingle Q Science (General)
W. J., Fan
Interband and Intersubband Optical Transition Matrix Elements of Ge/Gesisn Quantum Well
description The interband and intersubband optical transition matrix elements of a tensile-strained Ge/GeSiSn quantum well are investigated by using an 8-band k·p method. For conduction to valence band interband optical transition, the S→X,Y,Z transitions are dominant. For intersubband optical transition including the conduction to conduction band and the valence to valence band transitions, the S→X,Y,Z transitions and X,Y,Z →S transitions are significant due to the strong interaction between the conduction band and valence band, and the S, X,Y,Z → S,X,Y,Z transitions are greatly depressed, which are completely different with the results of single band effective mass approximation. The results will be helpful to design optoelectronic devices, such as Laser and LED diodes, photodetector, and solar cell.
format E-Article
author W. J., Fan
author_facet W. J., Fan
author_sort W. J., Fan
title Interband and Intersubband Optical Transition Matrix Elements of Ge/Gesisn Quantum Well
title_short Interband and Intersubband Optical Transition Matrix Elements of Ge/Gesisn Quantum Well
title_full Interband and Intersubband Optical Transition Matrix Elements of Ge/Gesisn Quantum Well
title_fullStr Interband and Intersubband Optical Transition Matrix Elements of Ge/Gesisn Quantum Well
title_full_unstemmed Interband and Intersubband Optical Transition Matrix Elements of Ge/Gesisn Quantum Well
title_sort interband and intersubband optical transition matrix elements of ge/gesisn quantum well
publisher ENCON 2013
publishDate 2013
url http://ir.unimas.my/id/eprint/8162/
http://rpsonline.com.sg/proceedings/9789810760595/html/015.xml
_version_ 1644510470849167360
score 13.223943

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