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High Gain of 3.1-5.1 GHz CMOS Power Amplifier for Direct Sequence Ultra-Wideband Application

This paper presents the design a power amplifier (PA) for direct sequence ultra-wideband applications using 0.13 μm CMOS technology operating in a low band frequency of 3.1 GHz to 5.1 GHz. Current-reused technique is employed at the first stage to increase the gain at the upper end of the desired ba...

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Bibliographic Details
Main Authors: Sapawi, R., Asyraf, A.N., Mohamad Hasnul, D.H.A., Sahari, S.K., Masra, S.M.W., Kipli, K., Julai, N., Junaidi, Nazreen, Salleh, D.N.S.A, Murad, S.A.Z.
Format: E-Article
Language:English
Published: UTEM 2017
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://ir.unimas.my/id/eprint/15392/1/High%20Gain%20of%203.1-5.1%20GHz%20CMOS%20Power%20Amplifier%20for%20Direct%20Sequence%20Ultra-Wideband%20Application%20%28abstract%29.pdf
http://ir.unimas.my/id/eprint/15392/
http://journal.utem.edu.my/index.php/jtec/article/viewFile/1443/954
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http://ir.unimas.my/id/eprint/15392/1/High%20Gain%20of%203.1-5.1%20GHz%20CMOS%20Power%20Amplifier%20for%20Direct%20Sequence%20Ultra-Wideband%20Application%20%28abstract%29.pdf
http://ir.unimas.my/id/eprint/15392/
http://journal.utem.edu.my/index.php/jtec/article/viewFile/1443/954

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