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Comparison on various developing method at clean track ACT 8 based on 0.5um CMOS Technology

International Conference on X-Rays and Related Techniques in Research and Industry (ICXRI 2010) jointly organized by Universiti Malaysia Perlis (UniMAP) and X-Ray Application Malaysia Society (XAPP), 9th - 10th June 2010 at Aseania Resort Langkawi, Malaysia.

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Bibliographic Details
Main Authors: Nazrah, Omar, Muhammad Hilmi, Othman, Anifah, Zakaria
Other Authors: Nazrah@mimos.my
Format: Working Paper
Language:English
Published: Universiti Malaysia Perlis 2010
Subjects:
Developing method
CD Sem
Wafer
Coater
Stepper
International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI)
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/9015
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spelling my.unimap-90152010-08-23T07:10:43Z Comparison on various developing method at clean track ACT 8 based on 0.5um CMOS Technology Nazrah, Omar Muhammad Hilmi, Othman Anifah, Zakaria Nazrah@mimos.my Developing method CD Sem Wafer Coater Stepper International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI) International Conference on X-Rays and Related Techniques in Research and Industry (ICXRI 2010) jointly organized by Universiti Malaysia Perlis (UniMAP) and X-Ray Application Malaysia Society (XAPP), 9th - 10th June 2010 at Aseania Resort Langkawi, Malaysia. Photoresist development is one of the critical steps in ensuring good critical dimension uniformity (CDU). In this paper, we demonstrate the methods by using 0.5um CMOS Technology Gate pattern. There methods used at our coater and developer system are standard, agitate and prewet. 25 pieces of 8 “dummy wafers were used for each method. All wafers were coated with 1.0um thickness of photoresist before we exposed it using Nikon stepper i14. Then the wafers were developed using different type of developing method at CLEAN TRACK ACT 8. These 3 batches of bare silicon wafers were run continuously in order to eliminate the variations of room humidity and temperature between runs. 13 wafers from each developing method we chosen as a sample to be measured at CD SEM system. 9 locations of CD measurement were measured in each wafer. CD vs. Wafer No graph were plotted in order to check the stability of CD measurement. Our finding from the study is that the agitation developing method gave the most stable and uniform CD measurement. 2010-08-23T07:10:43Z 2010-08-23T07:10:43Z 2010-06-09 Working Paper p.143-146 978-967-5760-02-0 http://hdl.handle.net/123456789/9015 en Proceedings of the International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI) 2010 Universiti Malaysia Perlis School of Materials Engineering & School of Environmental Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Developing method
CD Sem
Wafer
Coater
Stepper
International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI)
spellingShingle Developing method
CD Sem
Wafer
Coater
Stepper
International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI)
Nazrah, Omar
Muhammad Hilmi, Othman
Anifah, Zakaria
Comparison on various developing method at clean track ACT 8 based on 0.5um CMOS Technology
description International Conference on X-Rays and Related Techniques in Research and Industry (ICXRI 2010) jointly organized by Universiti Malaysia Perlis (UniMAP) and X-Ray Application Malaysia Society (XAPP), 9th - 10th June 2010 at Aseania Resort Langkawi, Malaysia.
author2 Nazrah@mimos.my
author_facet Nazrah@mimos.my
Nazrah, Omar
Muhammad Hilmi, Othman
Anifah, Zakaria
format Working Paper
author Nazrah, Omar
Muhammad Hilmi, Othman
Anifah, Zakaria
author_sort Nazrah, Omar
title Comparison on various developing method at clean track ACT 8 based on 0.5um CMOS Technology
title_short Comparison on various developing method at clean track ACT 8 based on 0.5um CMOS Technology
title_full Comparison on various developing method at clean track ACT 8 based on 0.5um CMOS Technology
title_fullStr Comparison on various developing method at clean track ACT 8 based on 0.5um CMOS Technology
title_full_unstemmed Comparison on various developing method at clean track ACT 8 based on 0.5um CMOS Technology
title_sort comparison on various developing method at clean track act 8 based on 0.5um cmos technology
publisher Universiti Malaysia Perlis
publishDate 2010
url http://dspace.unimap.edu.my/xmlui/handle/123456789/9015
_version_ 1643789350728630272
score 13.211869

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