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Design, simulation and characterization of 50nm p-well MOSFET using Sentaurus TCAD Software

Malaysian Technical Universities Conference on Engineering and Technology organized by Universiti Malaysia Pahang in collaboration with Universiti Tun Hussein Onn Malaysia, Universiti Teknikal Malaysia Melaka & Universiti Malaysia Perlis on June 20th - 22nd, 2009, at MS Garden Hotel, Kuantan, P...

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Main Authors: Marlia, Morsin, Mohd Khairul Amriey, Abdul Majeed, Zulkipli, Rahmat, Sanudin
Format: Working Paper
Language:English
Published: Universiti Malaysia Pahang 2010
Subjects:
P-well MOSFET
Sentaurus Process
Sentaurus Device
MOS (Metal Oxide Semiconductor) transistor
Malaysian Technical Universities Conference on Engineering and Technology (MUCEET)
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/8810
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spelling my.unimap-88102010-08-18T03:16:11Z Design, simulation and characterization of 50nm p-well MOSFET using Sentaurus TCAD Software Marlia, Morsin Mohd Khairul Amriey Abdul Majeed, Zulkipli Rahmat, Sanudin P-well MOSFET Sentaurus Process Sentaurus Device MOS (Metal Oxide Semiconductor) transistor Malaysian Technical Universities Conference on Engineering and Technology (MUCEET) Malaysian Technical Universities Conference on Engineering and Technology organized by Universiti Malaysia Pahang in collaboration with Universiti Tun Hussein Onn Malaysia, Universiti Teknikal Malaysia Melaka & Universiti Malaysia Perlis on June 20th - 22nd, 2009, at MS Garden Hotel, Kuantan, Pahang, Malaysia. Device 50nm p-well MOSFET was designed, developed and optimized based on 90nm recipe using Sentaurus TCAD Software. In this project, there are two sub-programs used which are Sentaurus Process and Sentaurus Device. Sentaurus Process is a simulation process which in designing the semiconductor technology. While Sentaurus Device work as a device simulator to find the characteristic for each semiconductor design. The simulation results are shown in two dimensions (2D) in INSPECT and TECPLOT SV. The threshold voltages (Vth) for NMOS and PMOS of 50nm are 0.187V and -0.071V, the drain saturation current (Idsat) are 6.897e-04A and 1.22e-03A with the leakage current (Ioff) are 2.799e-07A and 2.507e-08A. The simulation results are almost the same with the theoretical. 2010-08-18T03:16:11Z 2010-08-18T03:16:11Z 2009-06-20 Working Paper p.1-3 http://hdl.handle.net/123456789/8810 en Proceedings of the Malaysian Technical Universities Conference on Engineering and Technology (MUCEET) 2009 Universiti Malaysia Pahang
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic P-well MOSFET
Sentaurus Process
Sentaurus Device
MOS (Metal Oxide Semiconductor) transistor
Malaysian Technical Universities Conference on Engineering and Technology (MUCEET)
spellingShingle P-well MOSFET
Sentaurus Process
Sentaurus Device
MOS (Metal Oxide Semiconductor) transistor
Malaysian Technical Universities Conference on Engineering and Technology (MUCEET)
Marlia, Morsin
Mohd Khairul Amriey
Abdul Majeed, Zulkipli
Rahmat, Sanudin
Design, simulation and characterization of 50nm p-well MOSFET using Sentaurus TCAD Software
description Malaysian Technical Universities Conference on Engineering and Technology organized by Universiti Malaysia Pahang in collaboration with Universiti Tun Hussein Onn Malaysia, Universiti Teknikal Malaysia Melaka & Universiti Malaysia Perlis on June 20th - 22nd, 2009, at MS Garden Hotel, Kuantan, Pahang, Malaysia.
format Working Paper
author Marlia, Morsin
Mohd Khairul Amriey
Abdul Majeed, Zulkipli
Rahmat, Sanudin
author_facet Marlia, Morsin
Mohd Khairul Amriey
Abdul Majeed, Zulkipli
Rahmat, Sanudin
author_sort Marlia, Morsin
title Design, simulation and characterization of 50nm p-well MOSFET using Sentaurus TCAD Software
title_short Design, simulation and characterization of 50nm p-well MOSFET using Sentaurus TCAD Software
title_full Design, simulation and characterization of 50nm p-well MOSFET using Sentaurus TCAD Software
title_fullStr Design, simulation and characterization of 50nm p-well MOSFET using Sentaurus TCAD Software
title_full_unstemmed Design, simulation and characterization of 50nm p-well MOSFET using Sentaurus TCAD Software
title_sort design, simulation and characterization of 50nm p-well mosfet using sentaurus tcad software
publisher Universiti Malaysia Pahang
publishDate 2010
url http://dspace.unimap.edu.my/xmlui/handle/123456789/8810
_version_ 1643789211398045696
score 13.222552

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