Cover Image

Experimental performance analysis of fabricated Si/Ge thin film structure

Link to publisher's homepage at http://ijneam.unimap.edu.my/

Saved in:
Bibliographic Details
Main Authors: Eladl, Sh. M., Sharshar, K. A.
Other Authors: shaban_45@yahoo.com
Format: Article
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2023
Subjects:
Capacitance–Voltage (C-V)
SiGe thin films
Electron beam evaporator
MOS capacitor
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/78108
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.unimap-78108
record_format dspace
spelling my.unimap-781082023-03-09T02:22:41Z Experimental performance analysis of fabricated Si/Ge thin film structure Eladl, Sh. M. Eladl, Sh. M. Sharshar, K. A. shaban_45@yahoo.com Radiation Engineering Dept. National Center for Radiation Research and Technology (NCRRT), Egyptian Atomic Energy Authority (EAEA) Capacitance–Voltage (C-V) SiGe thin films Electron beam evaporator MOS capacitor Link to publisher's homepage at http://ijneam.unimap.edu.my/ This paper is devoted to the evaluation of a Silicon/Germanium (Si/Ge) thin film structure based on experimental measurements. An electron beam evaporator was used to fabricate this structure. The sample was prepared under high vacuum conditions (pressure of 10-5 Torr, power of 6 kV and current of 200 mA). At these conditions, it was possible to get films with thickness of approximately 300 Å. The capacitance–voltage (C–V) and current–voltage (I–V) measurements of the sample were performed by a staircase sweep of voltages from 0 to 5 V and back from 5 to 0 V at room temperature. The sample exhibits a low hysteresis in measurements; this hysteresis is gradually removed when the sample is exposed to temperatures until 80 °C using a Carbolite Oven. It is also observed that both C-V and I-V characteristic curves of the sample has been smoothened. This sample exhibits an electroforming behavior as a metal-oxide-semiconductor (MOS) device over a short time duration of the selected staircase double sweep, hence it can be exploited as a fast switching element in digital microelectronic circuits. In addition, the hysteresis changes over the range from room temperature until 80 °C have opened the door to the possibility of exploiting this sample as a proximity temperature sensor within that range of temperature. 2023-03-09T02:22:41Z 2023-03-09T02:22:41Z 2023-01 Article International Journal of Nanoelectronics and Materials, vol.16(1), 2023, pages 53-61 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/78108 http://ijneam.unimap.edu.my en Universiti Malaysia Perlis (UniMAP)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Capacitance–Voltage (C-V)
SiGe thin films
Electron beam evaporator
MOS capacitor
spellingShingle Capacitance–Voltage (C-V)
SiGe thin films
Electron beam evaporator
MOS capacitor
Eladl, Sh. M.
Eladl, Sh. M.
Sharshar, K. A.
Experimental performance analysis of fabricated Si/Ge thin film structure
description Link to publisher's homepage at http://ijneam.unimap.edu.my/
author2 shaban_45@yahoo.com
author_facet shaban_45@yahoo.com
Eladl, Sh. M.
Eladl, Sh. M.
Sharshar, K. A.
format Article
author Eladl, Sh. M.
Eladl, Sh. M.
Sharshar, K. A.
author_sort Eladl, Sh. M.
title Experimental performance analysis of fabricated Si/Ge thin film structure
title_short Experimental performance analysis of fabricated Si/Ge thin film structure
title_full Experimental performance analysis of fabricated Si/Ge thin film structure
title_fullStr Experimental performance analysis of fabricated Si/Ge thin film structure
title_full_unstemmed Experimental performance analysis of fabricated Si/Ge thin film structure
title_sort experimental performance analysis of fabricated si/ge thin film structure
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2023
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/78108
_version_ 1772813132370018304
score 13.222552

Similar Items