Comments: Numerical simulations of innovative ground plane and double-gate configurations in thin-body and -buried oxide of SOI MOSFETS

Doctor of Philosophy in Microelectronic Engineering

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Bibliographic Details
Main Author:	Noraini, Othman
Other Authors:	Mohd Khairuddin, Md Arshad, Assoc. Prof. Ir. Dr.
Format:	Thesis
Language:	English
Published:	Universiti Malaysia Perlis (UniMAP) 2017
Subjects:	Metal oxide semiconductors, Complementary Electric insulators and insulation Metal oxide semiconductor field-effect transistors Silicon-on-insulator (SOI)
Online Access:	http://dspace.unimap.edu.my:80/xmlui/handle/123456789/77998
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