The optimization of P-i-N power switching diode in term of reverse breakdown voltage and electrostatic disharge performance
Master of Science in Nanoelectronic Engineering
Saved in:
Main Author: | See, Jian Hao |
---|---|
Other Authors: | Mohd Khairuddin, Md Arshad, Assoc. Prof. Ir. Dr. |
Format: | Thesis |
Language: | English |
Published: |
Universiti Malaysia Perlis (UniMAP)
2017
|
Subjects: | |
Online Access: | http://dspace.unimap.edu.my:80/xmlui/handle/123456789/76629 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
2D-modeling for the simulation of current-voltage characteristics in polysilicon schottky diode deposited by LPCVD and SAPCVD methods
by: Benseddik, Nadia, et al.
Published: (2009) -
Partial disharge recognition using artificial neural network
by: Nur Afifah, Yusoff
Published: (2017) -
Design of Pin Diode Detector
by: Md Yunus, Nurul Amziah
Published: (2001) -
The study on the effects of varying Dopant concentration and Diffusion Time in the design of Silicon Avalanche Diode with minimum Vbr of 120v+20% by simulation
by: Yip Siew Ling
Published: (2008) -
Design and simulation of Gallium Arsenide based Schottky diodes for RF applications
by: Ong Chee Meng
Published: (2008)