Reproducibility of silicon single electron quantum dot transistor
Link to publisher's homepage at http://www.nsti.org/Nanotech2006/
Saved in:
Main Authors: | , |
---|---|
Format: | Article |
Language: | English |
Published: |
Nano Science and Technology Institute
2009
|
Subjects: | |
Online Access: | http://dspace.unimap.edu.my/xmlui/handle/123456789/6893 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
id |
my.unimap-6893 |
---|---|
record_format |
dspace |
spelling |
my.unimap-68932009-08-14T02:11:09Z Reproducibility of silicon single electron quantum dot transistor Uda, Hashim Sutikno, Madnarski Coulomb blockade oscillation Design of SET Quantum dot Reproducibility Single electron transistor Transistors Transistors -- Design and construction Link to publisher's homepage at http://www.nsti.org/Nanotech2006/ In principle, based on the form of tunnel junction, single electron transistor (SET) can be classified into four types, i.e. nanowire SET, quantum dot SET, nanotube SET and point contact SET. Another classification is SET based on the kind of conducting material between gate and island, which consists of resistive-SET and capacitive SET. There are about 18 types of SET designs have previously published by many researchers. This paper describes each SET design of 18 all in the reproducibly design point of view at most the form of source-drain contact junction, layers structure, and the modification of fabrication technology. The reproducibility of single electron transistor can be observed from the equity of design, dimension and device characteristics. Indeed, the forms of SET source-drain contact junction have very large influences on the difficulties level of fabrication processes and electrical characteristics. 2009-08-14T02:10:50Z 2009-08-14T02:10:50Z 2006 Article Technical Proceedings 3, p.35-38 http://www.nsti.org/Nanotech2006/ http://hdl.handle.net/123456789/6893 en Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Nano Science and Technology Institute |
institution |
Universiti Malaysia Perlis |
building |
UniMAP Library |
collection |
Institutional Repository |
continent |
Asia |
country |
Malaysia |
content_provider |
Universiti Malaysia Perlis |
content_source |
UniMAP Library Digital Repository |
url_provider |
http://dspace.unimap.edu.my/ |
language |
English |
topic |
Coulomb blockade oscillation Design of SET Quantum dot Reproducibility Single electron transistor Transistors Transistors -- Design and construction |
spellingShingle |
Coulomb blockade oscillation Design of SET Quantum dot Reproducibility Single electron transistor Transistors Transistors -- Design and construction Uda, Hashim Sutikno, Madnarski Reproducibility of silicon single electron quantum dot transistor |
description |
Link to publisher's homepage at http://www.nsti.org/Nanotech2006/ |
format |
Article |
author |
Uda, Hashim Sutikno, Madnarski |
author_facet |
Uda, Hashim Sutikno, Madnarski |
author_sort |
Uda, Hashim |
title |
Reproducibility of silicon single electron quantum dot transistor |
title_short |
Reproducibility of silicon single electron quantum dot transistor |
title_full |
Reproducibility of silicon single electron quantum dot transistor |
title_fullStr |
Reproducibility of silicon single electron quantum dot transistor |
title_full_unstemmed |
Reproducibility of silicon single electron quantum dot transistor |
title_sort |
reproducibility of silicon single electron quantum dot transistor |
publisher |
Nano Science and Technology Institute |
publishDate |
2009 |
url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/6893 |
_version_ |
1643788617866280960 |
score |
13.222552 |