A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation
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my.unimap-67962013-11-20T04:02:33Z A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation Madnarski Sutikno Uda, Hashim, Prof. Dr. Zul Azhar, Zahid Jamal, Prof. Dr. Pattern-dependent oxidation Quantum dot Rapid thermal processing Reconstruction method Quantum electronics Single-electron transistor (SET) Tunneling effects Transistors -- Design and construction Link to publisher's homepage at www.elsevier.com The tunnel barriers generation and the quantum dot size shrinkage play a significant role in single-electron transistor (SET) fabrication. Because the numerically etch indicators were not found, the technical indicators, high contrast surface and high smoothness surface were used to optimize the etch process. Si nanostructures oxidation using either oxidation furnace or rapid thermal processing (RTP) equipment can result in silicon dioxide (SiO2)-embedded-Si. In this research, we compare the furnace-oxidized-Si nanostructures with the RTP-oxidized-Si nanostructures. The oxidation rate of Si nanostructures using a furnace is 0.36 nm/s, while the oxidation rate of Si nanostructures using RTP is 2.16 nm/s. 2009-08-11T02:13:57Z 2009-08-11T02:13:57Z 2007-05 Article vol.39 (5), 2008, pages 727-731. 0959-8324 http://www.sciencedirect.com/science/journal/00262692 http://hdl.handle.net/123456789/6796 en Elsevier B.V. |
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Pattern-dependent oxidation Quantum dot Rapid thermal processing Reconstruction method Quantum electronics Single-electron transistor (SET) Tunneling effects Transistors -- Design and construction |
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Pattern-dependent oxidation Quantum dot Rapid thermal processing Reconstruction method Quantum electronics Single-electron transistor (SET) Tunneling effects Transistors -- Design and construction Madnarski Sutikno Uda, Hashim, Prof. Dr. Zul Azhar, Zahid Jamal, Prof. Dr. A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation |
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Link to publisher's homepage at www.elsevier.com |
format |
Article |
author |
Madnarski Sutikno Uda, Hashim, Prof. Dr. Zul Azhar, Zahid Jamal, Prof. Dr. |
author_facet |
Madnarski Sutikno Uda, Hashim, Prof. Dr. Zul Azhar, Zahid Jamal, Prof. Dr. |
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Madnarski Sutikno |
title |
A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation |
title_short |
A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation |
title_full |
A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation |
title_fullStr |
A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation |
title_full_unstemmed |
A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation |
title_sort |
simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation |
publisher |
Elsevier B.V. |
publishDate |
2009 |
url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/6796 |
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1643788627355893760 |
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13.222552 |