ESD improvement in P-i-N diode through introducing a lighter and deeper anode junction
Link to publisher's homepage at http://ijneam.unimap.edu.my/
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Universiti Malaysia Perlis (UniMAP)
2017
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my.unimap-499402017-11-21T01:25:05Z ESD improvement in P-i-N diode through introducing a lighter and deeper anode junction See, J. H. Md Arshad, M. K. Fathil, M. F. M. mohd.khairuddin@unimap.edu.my Electrostatic Discharge (ESD) Human Body Model (HBM) and Machine Model (MM) Forward voltage (VF) Reverse leakage current (IR) and Breakdown voltage (VBR) Link to publisher's homepage at http://ijneam.unimap.edu.my/ Continuous and aggressive miniaturization in the electronic gadget size poses a challenge in solving Electrostatic Discharge (ESD) reliability performance. For diode devices, the shrinkage of the size leads to severe electrical field crowding effect which can cause a total device failure under high ESD surge. Therefore, in this paper, we present a better ESD performance characteristic which can be achieved by optimizing the profile of the P+ anode junction of P-i-N diode. The characteristics profile can be altered by lowering the dopant concentration and increasing the depth of the P-i-N diode junction. In this work, comprehensive device simulations, followed by simulation result validation at the wafer level were performed. The ESD surge test was performed and results showed that the changes of the P+ anode junction profile on the P-i-N power switching diode can achieve the sustainability of 1 kV ESD surge in the Human Body Model (HBM) and more than 400 V ESD surge in the Machine Model (MM). 2017-10-12T03:58:32Z 2017-10-12T03:58:32Z 2017 Article International Journal of Nanoelectronics and Materials, vol.10 (2), 2017, pages 159-174 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49940 en Universiti Malaysia Perlis (UniMAP) |
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English |
| topic |
Electrostatic Discharge (ESD) Human Body Model (HBM) and Machine Model (MM) Forward voltage (VF) Reverse leakage current (IR) and Breakdown voltage (VBR) |
| spellingShingle |
Electrostatic Discharge (ESD) Human Body Model (HBM) and Machine Model (MM) Forward voltage (VF) Reverse leakage current (IR) and Breakdown voltage (VBR) See, J. H. Md Arshad, M. K. Fathil, M. F. M. ESD improvement in P-i-N diode through introducing a lighter and deeper anode junction |
| description |
Link to publisher's homepage at http://ijneam.unimap.edu.my/ |
| author2 |
mohd.khairuddin@unimap.edu.my |
| author_facet |
mohd.khairuddin@unimap.edu.my See, J. H. Md Arshad, M. K. Fathil, M. F. M. |
| format |
Article |
| author |
See, J. H. Md Arshad, M. K. Fathil, M. F. M. |
| author_sort |
See, J. H. |
| title |
ESD improvement in P-i-N diode through introducing a lighter and deeper anode junction |
| title_short |
ESD improvement in P-i-N diode through introducing a lighter and deeper anode junction |
| title_full |
ESD improvement in P-i-N diode through introducing a lighter and deeper anode junction |
| title_fullStr |
ESD improvement in P-i-N diode through introducing a lighter and deeper anode junction |
| title_full_unstemmed |
ESD improvement in P-i-N diode through introducing a lighter and deeper anode junction |
| title_sort |
esd improvement in p-i-n diode through introducing a lighter and deeper anode junction |
| publisher |
Universiti Malaysia Perlis (UniMAP) |
| publishDate |
2017 |
| url |
http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49940 |
| _version_ |
1643802827828494336 |
| score |
13.211869 |