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Reactive PLD of ZnO thin film for optoelectronic application

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Main Authors: Salem, Evan T., Ismail, Raid A., Fakhry, Makaram A., Yusof, Yushamdan
Format: Article
Language:English
Published: Universiti Malaysia Perlis 2017
Subjects:
TCO thin film
MIS device
PLD deposition
Electrical properties
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49270
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spelling my.unimap-492702017-11-21T01:53:09Z Reactive PLD of ZnO thin film for optoelectronic application Salem, Evan T. Ismail, Raid A. Fakhry, Makaram A. Yusof, Yushamdan TCO thin film MIS device PLD deposition Electrical properties Link to publisher's homepage at http://ijneam.unimap.edu.my/ ZnO/Si heterostracture has been constructed on (111) oriented silicon substrate using a pulsed Nd: YAG laser for the ablation of Zn target in the presence of oxygen as reactive atmosphere in order to prepare ZnO TCO's films. Were the electrical properties of these films have been invested reaching to the optimum oxygen pressure at which the device has been prepared. ZnO films, formed at 300 Torr oxygen ambient, showed an electrical resistivity of 0.27 Ω.cm, without using post-deposition heat treatment. The electrical properties of the preparation device have been carried out at different substrate temperatures. Also the detector parameter has been measured 2017-08-08T04:47:18Z 2017-08-08T04:47:18Z 2016 Article International Journal of Nanoelectronics and Materials, vol.9 (2), 2016, pages 111-122 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49270 en Universiti Malaysia Perlis
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic TCO thin film
MIS device
PLD deposition
Electrical properties
spellingShingle TCO thin film
MIS device
PLD deposition
Electrical properties
Salem, Evan T.
Ismail, Raid A.
Fakhry, Makaram A.
Yusof, Yushamdan
Reactive PLD of ZnO thin film for optoelectronic application
description Link to publisher's homepage at http://ijneam.unimap.edu.my/
format Article
author Salem, Evan T.
Ismail, Raid A.
Fakhry, Makaram A.
Yusof, Yushamdan
author_facet Salem, Evan T.
Ismail, Raid A.
Fakhry, Makaram A.
Yusof, Yushamdan
author_sort Salem, Evan T.
title Reactive PLD of ZnO thin film for optoelectronic application
title_short Reactive PLD of ZnO thin film for optoelectronic application
title_full Reactive PLD of ZnO thin film for optoelectronic application
title_fullStr Reactive PLD of ZnO thin film for optoelectronic application
title_full_unstemmed Reactive PLD of ZnO thin film for optoelectronic application
title_sort reactive pld of zno thin film for optoelectronic application
publisher Universiti Malaysia Perlis
publishDate 2017
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49270
_version_ 1643802821770870784
score 13.222552

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