Propagation effects in carbon nanoelectronics
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my.unimap-413372016-04-22T10:53:30Z Propagation effects in carbon nanoelectronics Hosseini, Ehsan. _Hosseiny.e@gmail.com. Radiation Mobility Field effect transistors (FETs) Link to publisher's homepage at http://ijneam.unimap.edu.my/ This research examines the ingredients of Cobalt-60 propagation on the electrical attributes of single-walled carbon nanotube and (G-FETs). The research observes significant variances in the radiation response of instruments depending on their propagation environment, and corroborate under controlled conditions, standard dielectric hardening approaches are useable to carbon nanoelectronics devices. 2016-04-22T10:53:30Z 2016-04-22T10:53:30Z 2015 Article International Journal of Nanoelectronics and Materials, vol.8, 2015, pages 91-98 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41337 en Universiti Malaysia Perlis |
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Radiation Mobility Field effect transistors (FETs) |
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Radiation Mobility Field effect transistors (FETs) Hosseini, Ehsan. Propagation effects in carbon nanoelectronics |
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Link to publisher's homepage at http://ijneam.unimap.edu.my/ |
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_Hosseiny.e@gmail.com. |
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_Hosseiny.e@gmail.com. Hosseini, Ehsan. |
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Hosseini, Ehsan. |
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Hosseini, Ehsan. |
title |
Propagation effects in carbon nanoelectronics |
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Propagation effects in carbon nanoelectronics |
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Propagation effects in carbon nanoelectronics |
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Propagation effects in carbon nanoelectronics |
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Propagation effects in carbon nanoelectronics |
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propagation effects in carbon nanoelectronics |
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Universiti Malaysia Perlis |
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2016 |
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http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41337 |
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1643799684884463616 |
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13.222552 |