Quantum mechanical direct leakage currents in a sub 10 nm mosfet: a rigorous modeling study
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Universiti Malaysia Perlis
2016
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my.unimap-412672017-11-21T03:24:09Z Quantum mechanical direct leakage currents in a sub 10 nm mosfet: a rigorous modeling study Chaudhry, Amit Nath Roy, Jatindra amit_chaudhry01@yahoo.com. QME WKB Inversion layer quantization Tunneling Link to publisher's homepage at http://ijneam.unimap.edu.my/ In this paper, we have developed a rigorous model for the quantum mechanical source to drain electron/hole tunneling in sub 10nm nanometer scale metal-oxide-semiconductor field effect transistor (MOSFETs). Inversion layer quantization, band-gap narrowing, drain induced barrier lowering (DIBL) and variable doping at source and channel have been included in the developed model. Results predict that the source to drain tunneling results in an increase of leakage currents in sub 10 nm MOSFETs and hence cannot be ignored. The results match closely with the numerical results already reported in literature proving the accuracy of the model. 2016-04-08T08:14:43Z 2016-04-08T08:14:43Z 2012 Article International Journal of Nanoelectronics and Materials, vol.5 (1), 2012, pages 39-46 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41267 en Universiti Malaysia Perlis |
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UniMAP Library |
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Asia |
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Malaysia |
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Universiti Malaysia Perlis |
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UniMAP Library Digital Repository |
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http://dspace.unimap.edu.my/ |
| language |
English |
| topic |
QME WKB Inversion layer quantization Tunneling |
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QME WKB Inversion layer quantization Tunneling Chaudhry, Amit Nath Roy, Jatindra Quantum mechanical direct leakage currents in a sub 10 nm mosfet: a rigorous modeling study |
| description |
Link to publisher's homepage at http://ijneam.unimap.edu.my/ |
| author2 |
amit_chaudhry01@yahoo.com. |
| author_facet |
amit_chaudhry01@yahoo.com. Chaudhry, Amit Nath Roy, Jatindra |
| format |
Article |
| author |
Chaudhry, Amit Nath Roy, Jatindra |
| author_sort |
Chaudhry, Amit |
| title |
Quantum mechanical direct leakage currents in a sub 10 nm mosfet: a rigorous modeling study |
| title_short |
Quantum mechanical direct leakage currents in a sub 10 nm mosfet: a rigorous modeling study |
| title_full |
Quantum mechanical direct leakage currents in a sub 10 nm mosfet: a rigorous modeling study |
| title_fullStr |
Quantum mechanical direct leakage currents in a sub 10 nm mosfet: a rigorous modeling study |
| title_full_unstemmed |
Quantum mechanical direct leakage currents in a sub 10 nm mosfet: a rigorous modeling study |
| title_sort |
quantum mechanical direct leakage currents in a sub 10 nm mosfet: a rigorous modeling study |
| publisher |
Universiti Malaysia Perlis |
| publishDate |
2016 |
| url |
http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41267 |
| _version_ |
1643802789596364800 |
| score |
13.251813 |