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Quantum mechanical direct leakage currents in a sub 10 nm mosfet: a rigorous modeling study

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Bibliographic Details
Main Authors: Chaudhry, Amit, Nath Roy, Jatindra
Other Authors: amit_chaudhry01@yahoo.com.
Format: Article
Language:English
Published: Universiti Malaysia Perlis 2016
Subjects:
QME
WKB
Inversion layer quantization
Tunneling
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41267
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spelling my.unimap-412672017-11-21T03:24:09Z Quantum mechanical direct leakage currents in a sub 10 nm mosfet: a rigorous modeling study Chaudhry, Amit Nath Roy, Jatindra amit_chaudhry01@yahoo.com. QME WKB Inversion layer quantization Tunneling Link to publisher's homepage at http://ijneam.unimap.edu.my/ In this paper, we have developed a rigorous model for the quantum mechanical source to drain electron/hole tunneling in sub 10nm nanometer scale metal-oxide-semiconductor field effect transistor (MOSFETs). Inversion layer quantization, band-gap narrowing, drain induced barrier lowering (DIBL) and variable doping at source and channel have been included in the developed model. Results predict that the source to drain tunneling results in an increase of leakage currents in sub 10 nm MOSFETs and hence cannot be ignored. The results match closely with the numerical results already reported in literature proving the accuracy of the model. 2016-04-08T08:14:43Z 2016-04-08T08:14:43Z 2012 Article International Journal of Nanoelectronics and Materials, vol.5 (1), 2012, pages 39-46 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41267 en Universiti Malaysia Perlis
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic QME
WKB
Inversion layer quantization
Tunneling
spellingShingle QME
WKB
Inversion layer quantization
Tunneling
Chaudhry, Amit
Nath Roy, Jatindra
Quantum mechanical direct leakage currents in a sub 10 nm mosfet: a rigorous modeling study
description Link to publisher's homepage at http://ijneam.unimap.edu.my/
author2 amit_chaudhry01@yahoo.com.
author_facet amit_chaudhry01@yahoo.com.
Chaudhry, Amit
Nath Roy, Jatindra
format Article
author Chaudhry, Amit
Nath Roy, Jatindra
author_sort Chaudhry, Amit
title Quantum mechanical direct leakage currents in a sub 10 nm mosfet: a rigorous modeling study
title_short Quantum mechanical direct leakage currents in a sub 10 nm mosfet: a rigorous modeling study
title_full Quantum mechanical direct leakage currents in a sub 10 nm mosfet: a rigorous modeling study
title_fullStr Quantum mechanical direct leakage currents in a sub 10 nm mosfet: a rigorous modeling study
title_full_unstemmed Quantum mechanical direct leakage currents in a sub 10 nm mosfet: a rigorous modeling study
title_sort quantum mechanical direct leakage currents in a sub 10 nm mosfet: a rigorous modeling study
publisher Universiti Malaysia Perlis
publishDate 2016
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41267
_version_ 1643802789596364800
score 13.222552

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