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The dependence of saturation velocity on temperature, charge and electric field in a nanoscale MOSFET

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Main Authors: Arora, Vijay K., Mohammed Taghi, Ahmadi, Razali, Ismail, Ismail, Saad, Michael Loong Peng, Tan
Other Authors: ismailsaad07@gmail.com
Format: Article
Language:English
Published: Universiti Malaysia Perlis 2016
Subjects:
Nano-MOSFET
Saturation Velocity
Quantum Confinement
Ballistic Carriers
High-Field Transport
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41209
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spelling my.unimap-412092017-11-21T04:04:15Z The dependence of saturation velocity on temperature, charge and electric field in a nanoscale MOSFET Arora, Vijay K. Mohammed Taghi, Ahmadi Razali, Ismail Ismail, Saad Michael Loong Peng, Tan ismailsaad07@gmail.com Nano-MOSFET Saturation Velocity Quantum Confinement Ballistic Carriers High-Field Transport Link to publisher's homepage at http://ijneam.unimap.edu.my/ The intrinsic velocity is shown to be the ultimate limit to the saturation velocity in a very high electric field. The unidirectional intrinsic velocity arises from the fact that randomly oriented velocity vectors in zero electric field are streamlined and become unidirectional giving the ultimate drift velocity that is limited by the collision-free (ballistic) intrinsic velocity. In the nondegenerate regime, the intrinsic velocity is the thermal velocity that is a function of temperature and does not sensitively depend on the carrier concentration. In the degenerate regime, the intrinsic velocity is the Fermi velocity that is a function of carrier concentration and independent of temperature. The presence of a quantum emission lowers the saturation velocity. The drain carrier velocity is revealed to be smaller than the saturation velocity due to the presence of the finite electric field at the drain of a MOSFET. The popular channel pinchoff assumption is revealed not to be valid for either a long or short channel. Channel conduction beyond pinchoff enhances due to increase in the drain velocity as a result of enhanced drain electric field as drain voltage is increased, giving a realistic description of the channel length modulation without using any artificial parameters. The velocity so obtained is considered in modeling the current voltage characteristics of a MOSFET channel in the inversion regime and excellent agreement is obtained with experimental results on an 80-nm channel. 2016-03-28T08:12:32Z 2016-03-28T08:12:32Z 2010 Article International Journal of Nanoelectronics and Materials, vol.3 (1), 2010, pages 17-34 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41209 en Universiti Malaysia Perlis
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Nano-MOSFET
Saturation Velocity
Quantum Confinement
Ballistic Carriers
High-Field Transport
spellingShingle Nano-MOSFET
Saturation Velocity
Quantum Confinement
Ballistic Carriers
High-Field Transport
Arora, Vijay K.
Mohammed Taghi, Ahmadi
Razali, Ismail
Ismail, Saad
Michael Loong Peng, Tan
The dependence of saturation velocity on temperature, charge and electric field in a nanoscale MOSFET
description Link to publisher's homepage at http://ijneam.unimap.edu.my/
author2 ismailsaad07@gmail.com
author_facet ismailsaad07@gmail.com
Arora, Vijay K.
Mohammed Taghi, Ahmadi
Razali, Ismail
Ismail, Saad
Michael Loong Peng, Tan
format Article
author Arora, Vijay K.
Mohammed Taghi, Ahmadi
Razali, Ismail
Ismail, Saad
Michael Loong Peng, Tan
author_sort Arora, Vijay K.
title The dependence of saturation velocity on temperature, charge and electric field in a nanoscale MOSFET
title_short The dependence of saturation velocity on temperature, charge and electric field in a nanoscale MOSFET
title_full The dependence of saturation velocity on temperature, charge and electric field in a nanoscale MOSFET
title_fullStr The dependence of saturation velocity on temperature, charge and electric field in a nanoscale MOSFET
title_full_unstemmed The dependence of saturation velocity on temperature, charge and electric field in a nanoscale MOSFET
title_sort dependence of saturation velocity on temperature, charge and electric field in a nanoscale mosfet
publisher Universiti Malaysia Perlis
publishDate 2016
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41209
_version_ 1643802782231166976
score 13.222552

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