Application of InN based quantum dot in reducing short circuit current variation of solar cell above room temperature

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Main Authors: Mohd Abdur Rashid, Dr., Mohd Fareq, Abd. Malek, Dr., A.N., Al-Khateeb, Rosli, F.A., Md. Abdullah, Al Humayun, Nur Hafeizza, Ramly
Other Authors: abdurrashid@unimap.edu.my
Format: Article
Language:English
Published: Trans Tech Publications 2014
Subjects:
InN
Online Access:http://dspace.unimap.edu.my:80/dspace/handle/123456789/32675
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spelling my.unimap-326752014-03-23T05:55:17Z Application of InN based quantum dot in reducing short circuit current variation of solar cell above room temperature Mohd Abdur Rashid, Dr. Mohd Fareq, Abd. Malek, Dr. A.N., Al-Khateeb Rosli, F.A. Md. Abdullah, Al Humayun Nur Hafeizza, Ramly abdurrashid@unimap.edu.my InN Quantum dot Short circuit current Temperature Link to publisher's homepage at http://www.ttp.net/ This paper focuses on the applicability of InN based quantum dot in the active layer of the solar cell to reduce the short circuit current variation above the room temperature. We have investigated numerically the effect of temperature on the short circuit current of the solar cell using InN based quantum dot in the active layer of the solar cell. The numerical results are compared with those obtained by using Ge based quantum dot. The comparison results revealed that the short circuit current has been increased slightly but the variation of short circuit current has been reduced significantly in the case of using InN quantum dot in the active layer of the device structure. As the results, InN can be considered as the best alternative material to fabricate solar cell with higher short circuit current in upcoming decades. 2014-03-13T09:23:04Z 2014-03-13T09:23:04Z 2014-01 Article Key Engineering Materials, vol.594-595, 2014, pages 3-7 1662-9795 http://dspace.unimap.edu.my:80/dspace/handle/123456789/32675 http://www.scientific.net/KEM.594-595.3 en Trans Tech Publications
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic InN
Quantum dot
Short circuit current
Temperature
spellingShingle InN
Quantum dot
Short circuit current
Temperature
Mohd Abdur Rashid, Dr.
Mohd Fareq, Abd. Malek, Dr.
A.N., Al-Khateeb
Rosli, F.A.
Md. Abdullah, Al Humayun
Nur Hafeizza, Ramly
Application of InN based quantum dot in reducing short circuit current variation of solar cell above room temperature
description Link to publisher's homepage at http://www.ttp.net/
author2 abdurrashid@unimap.edu.my
author_facet abdurrashid@unimap.edu.my
Mohd Abdur Rashid, Dr.
Mohd Fareq, Abd. Malek, Dr.
A.N., Al-Khateeb
Rosli, F.A.
Md. Abdullah, Al Humayun
Nur Hafeizza, Ramly
format Article
author Mohd Abdur Rashid, Dr.
Mohd Fareq, Abd. Malek, Dr.
A.N., Al-Khateeb
Rosli, F.A.
Md. Abdullah, Al Humayun
Nur Hafeizza, Ramly
author_sort Mohd Abdur Rashid, Dr.
title Application of InN based quantum dot in reducing short circuit current variation of solar cell above room temperature
title_short Application of InN based quantum dot in reducing short circuit current variation of solar cell above room temperature
title_full Application of InN based quantum dot in reducing short circuit current variation of solar cell above room temperature
title_fullStr Application of InN based quantum dot in reducing short circuit current variation of solar cell above room temperature
title_full_unstemmed Application of InN based quantum dot in reducing short circuit current variation of solar cell above room temperature
title_sort application of inn based quantum dot in reducing short circuit current variation of solar cell above room temperature
publisher Trans Tech Publications
publishDate 2014
url http://dspace.unimap.edu.my:80/dspace/handle/123456789/32675
_version_ 1643796959657459712
score 13.222552