Application of InN based quantum dot in reducing short circuit current variation of solar cell above room temperature
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Trans Tech Publications
2014
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my.unimap-326752014-03-23T05:55:17Z Application of InN based quantum dot in reducing short circuit current variation of solar cell above room temperature Mohd Abdur Rashid, Dr. Mohd Fareq, Abd. Malek, Dr. A.N., Al-Khateeb Rosli, F.A. Md. Abdullah, Al Humayun Nur Hafeizza, Ramly abdurrashid@unimap.edu.my InN Quantum dot Short circuit current Temperature Link to publisher's homepage at http://www.ttp.net/ This paper focuses on the applicability of InN based quantum dot in the active layer of the solar cell to reduce the short circuit current variation above the room temperature. We have investigated numerically the effect of temperature on the short circuit current of the solar cell using InN based quantum dot in the active layer of the solar cell. The numerical results are compared with those obtained by using Ge based quantum dot. The comparison results revealed that the short circuit current has been increased slightly but the variation of short circuit current has been reduced significantly in the case of using InN quantum dot in the active layer of the device structure. As the results, InN can be considered as the best alternative material to fabricate solar cell with higher short circuit current in upcoming decades. 2014-03-13T09:23:04Z 2014-03-13T09:23:04Z 2014-01 Article Key Engineering Materials, vol.594-595, 2014, pages 3-7 1662-9795 http://dspace.unimap.edu.my:80/dspace/handle/123456789/32675 http://www.scientific.net/KEM.594-595.3 en Trans Tech Publications |
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InN Quantum dot Short circuit current Temperature |
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InN Quantum dot Short circuit current Temperature Mohd Abdur Rashid, Dr. Mohd Fareq, Abd. Malek, Dr. A.N., Al-Khateeb Rosli, F.A. Md. Abdullah, Al Humayun Nur Hafeizza, Ramly Application of InN based quantum dot in reducing short circuit current variation of solar cell above room temperature |
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Link to publisher's homepage at http://www.ttp.net/ |
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abdurrashid@unimap.edu.my |
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abdurrashid@unimap.edu.my Mohd Abdur Rashid, Dr. Mohd Fareq, Abd. Malek, Dr. A.N., Al-Khateeb Rosli, F.A. Md. Abdullah, Al Humayun Nur Hafeizza, Ramly |
| format |
Article |
| author |
Mohd Abdur Rashid, Dr. Mohd Fareq, Abd. Malek, Dr. A.N., Al-Khateeb Rosli, F.A. Md. Abdullah, Al Humayun Nur Hafeizza, Ramly |
| author_sort |
Mohd Abdur Rashid, Dr. |
| title |
Application of InN based quantum dot in reducing short circuit current variation of solar cell above room temperature |
| title_short |
Application of InN based quantum dot in reducing short circuit current variation of solar cell above room temperature |
| title_full |
Application of InN based quantum dot in reducing short circuit current variation of solar cell above room temperature |
| title_fullStr |
Application of InN based quantum dot in reducing short circuit current variation of solar cell above room temperature |
| title_full_unstemmed |
Application of InN based quantum dot in reducing short circuit current variation of solar cell above room temperature |
| title_sort |
application of inn based quantum dot in reducing short circuit current variation of solar cell above room temperature |
| publisher |
Trans Tech Publications |
| publishDate |
2014 |
| url |
http://dspace.unimap.edu.my:80/dspace/handle/123456789/32675 |
| _version_ |
1643796959657459712 |
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13.211869 |