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Fabrication Of 50 µm transistor and AlNiAu interconnection process

Generally process fabrication transistor will starts by cleaning the wafer, formation region drain, D and source, S, get oxide and deposited aluminum as contact with the source, drain and gate. Mask is very important thing to develop the pattern transfer in fabrication process Based on that, the pro...

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Main Author: Shaffie Husin
Other Authors: Mohd Khairuddin Md Arshad (Advisor)
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis 2008
Subjects:
Transistors
Silicon
Negative metal oxide semiconductors (NMOS)
Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
Transistors > Design and construction
Silicon oxidation
Transistor circuits
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1938
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spelling my.unimap-19382008-09-04T03:20:23Z Fabrication Of 50 µm transistor and AlNiAu interconnection process Shaffie Husin Mohd Khairuddin Md Arshad (Advisor) Transistors Silicon Negative metal oxide semiconductors (NMOS) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Transistors -- Design and construction Silicon oxidation Transistor circuits Generally process fabrication transistor will starts by cleaning the wafer, formation region drain, D and source, S, get oxide and deposited aluminum as contact with the source, drain and gate. Mask is very important thing to develop the pattern transfer in fabrication process Based on that, the project fabrication transistor not successful because quality of mask not very compatible to develop the smaller size. AlNiAu as the interconnection involved of several steps. It starts with Al deposition, the follow by cleaning, activation and zincation to remove the oxide layer thus, provide good adhesive. The next process is nickel deposition and lastly gold in deposited on top of Ni. Gold is used because of is not easily oxidize upon exposure for environment. Size of bond pad, chemical and temperature during the process and most important is thickness of aluminum, passivation and also photoresist layer, must be determined to achieve consistent result. 2008-09-04T03:20:22Z 2008-09-04T03:20:22Z 2007-03 Learning Object http://hdl.handle.net/123456789/1938 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Transistors
Silicon
Negative metal oxide semiconductors (NMOS)
Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
Transistors -- Design and construction
Silicon oxidation
Transistor circuits
spellingShingle Transistors
Silicon
Negative metal oxide semiconductors (NMOS)
Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
Transistors -- Design and construction
Silicon oxidation
Transistor circuits
Shaffie Husin
Fabrication Of 50 µm transistor and AlNiAu interconnection process
description Generally process fabrication transistor will starts by cleaning the wafer, formation region drain, D and source, S, get oxide and deposited aluminum as contact with the source, drain and gate. Mask is very important thing to develop the pattern transfer in fabrication process Based on that, the project fabrication transistor not successful because quality of mask not very compatible to develop the smaller size. AlNiAu as the interconnection involved of several steps. It starts with Al deposition, the follow by cleaning, activation and zincation to remove the oxide layer thus, provide good adhesive. The next process is nickel deposition and lastly gold in deposited on top of Ni. Gold is used because of is not easily oxidize upon exposure for environment. Size of bond pad, chemical and temperature during the process and most important is thickness of aluminum, passivation and also photoresist layer, must be determined to achieve consistent result.
author2 Mohd Khairuddin Md Arshad (Advisor)
author_facet Mohd Khairuddin Md Arshad (Advisor)
Shaffie Husin
format Learning Object
author Shaffie Husin
author_sort Shaffie Husin
title Fabrication Of 50 µm transistor and AlNiAu interconnection process
title_short Fabrication Of 50 µm transistor and AlNiAu interconnection process
title_full Fabrication Of 50 µm transistor and AlNiAu interconnection process
title_fullStr Fabrication Of 50 µm transistor and AlNiAu interconnection process
title_full_unstemmed Fabrication Of 50 µm transistor and AlNiAu interconnection process
title_sort fabrication of 50 µm transistor and alniau interconnection process
publisher Universiti Malaysia Perlis
publishDate 2008
url http://dspace.unimap.edu.my/xmlui/handle/123456789/1938
_version_ 1643787492267130880
score 13.222552

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