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Recombination activity of contaminated dislocations in silicon: a model describing electron-beam-induced current contrast behavior

Existing experimental data give many evidences that the recombination rate of minority charge carriers at dislocations in silicon depends strongly on dislocation decoration by transition metal impurities. Here, we present a model that allows a quantitative description of the recombination of minorit...

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Main Authors: Kveder, V., Kittler, M., Schroter, W.
Format: Article
Language:English
Published: The American Physical Society 2008
Subjects:
Molecular dynamics
Silicon
Electron beams
Atoms
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1489
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spelling my.unimap-14892008-08-01T01:37:01Z Recombination activity of contaminated dislocations in silicon: a model describing electron-beam-induced current contrast behavior Kveder, V. Kittler, M. Schroter, W. Molecular dynamics Silicon Electron beams Atoms Existing experimental data give many evidences that the recombination rate of minority charge carriers at dislocations in silicon depends strongly on dislocation decoration by transition metal impurities. Here, we present a model that allows a quantitative description of the recombination of minority carriers at decorated dislocations. It assumes that shallow dislocation bands, induced by the strain field, and deep electronic levels, caused by impurity atoms, which have segregated at the dislocation, or by core defects, can exchange electrons and holes. As a consequence, the recombination of carriers captured at dislocation bands can be drastically enhanced by the presence of even small concentrations of impurity atoms at the dislocation core. The model allows us not only to explain experimentally observed dependences of the recombination rate on temperature and excitation level, but also to estimate the concentration of deer) level impurities at dislocations. 2008-08-01T01:37:01Z 2008-08-01T01:37:01Z 2001 Article Physical Review B - Condensed Matter and Materials Physics, vol. 63, no. 11, 2001, pages 1152081-11520811 01631829 http://hdl.handle.net/123456789/1489 en The American Physical Society
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Molecular dynamics
Silicon
Electron beams
Atoms
spellingShingle Molecular dynamics
Silicon
Electron beams
Atoms
Kveder, V.
Kittler, M.
Schroter, W.
Recombination activity of contaminated dislocations in silicon: a model describing electron-beam-induced current contrast behavior
description Existing experimental data give many evidences that the recombination rate of minority charge carriers at dislocations in silicon depends strongly on dislocation decoration by transition metal impurities. Here, we present a model that allows a quantitative description of the recombination of minority carriers at decorated dislocations. It assumes that shallow dislocation bands, induced by the strain field, and deep electronic levels, caused by impurity atoms, which have segregated at the dislocation, or by core defects, can exchange electrons and holes. As a consequence, the recombination of carriers captured at dislocation bands can be drastically enhanced by the presence of even small concentrations of impurity atoms at the dislocation core. The model allows us not only to explain experimentally observed dependences of the recombination rate on temperature and excitation level, but also to estimate the concentration of deer) level impurities at dislocations.
format Article
author Kveder, V.
Kittler, M.
Schroter, W.
author_facet Kveder, V.
Kittler, M.
Schroter, W.
author_sort Kveder, V.
title Recombination activity of contaminated dislocations in silicon: a model describing electron-beam-induced current contrast behavior
title_short Recombination activity of contaminated dislocations in silicon: a model describing electron-beam-induced current contrast behavior
title_full Recombination activity of contaminated dislocations in silicon: a model describing electron-beam-induced current contrast behavior
title_fullStr Recombination activity of contaminated dislocations in silicon: a model describing electron-beam-induced current contrast behavior
title_full_unstemmed Recombination activity of contaminated dislocations in silicon: a model describing electron-beam-induced current contrast behavior
title_sort recombination activity of contaminated dislocations in silicon: a model describing electron-beam-induced current contrast behavior
publisher The American Physical Society
publishDate 2008
url http://dspace.unimap.edu.my/xmlui/handle/123456789/1489
_version_ 1643787336959393792
score 13.222552

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