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Investigation and Modeling of Boron Diffusion Reduction in Silicon by Flourine Implantation using Numerical Simulation

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Bibliographic Details
Main Author: Chuah Soo Kiet
Other Authors: Sharifah Norfaezah Sabki (Advisor)
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis 2008
Subjects:
Silicon
Transient enhanced diffusion (TED)
Organometallic compounds
Boron compounds
Boron
Semiconductor devices
Fluorine
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1348
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spelling my.unimap-13482008-06-30T09:04:42Z Investigation and Modeling of Boron Diffusion Reduction in Silicon by Flourine Implantation using Numerical Simulation Chuah Soo Kiet Sharifah Norfaezah Sabki (Advisor) Silicon Transient enhanced diffusion (TED) Organometallic compounds Boron compounds Boron Semiconductor devices Fluorine Access is limited to UniMAP community. With the increased interest in the use of fluorine co-implantation with boron for boron diffusion reduction in the fabrication of semiconductor devices, it is important to understand the mechanisms by which fluorine reduces transient enhanced diffusion (TED) and boron thermal diffusion. In this project, two special structures (structure A and structure B) are generated using process simulation to investigate the mechanism responsible for boron transient enhanced diffusion and the reduction of boron diffusion in silicon. Three F+ implantation energies of 20, 35 and 50 kev are used with same dose of 1×1015 / cm3 and follow by process diffusion at 900oC for 30 second. It is obtained that fluorine implantation has occasionally reduced boron transient enhanced diffusion caused by the boron implant ion. The role of the boron concentration, interstitials, vacancies, boron clusters and evolution of diffusion based different time of boron diffusion in silicon will be discussed. The simulations results suggest that fluorine is reducing the boron transient enhanced diffusion. 2008-06-30T09:04:42Z 2008-06-30T09:04:42Z 2007-05 Learning Object http://hdl.handle.net/123456789/1348 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Silicon
Transient enhanced diffusion (TED)
Organometallic compounds
Boron compounds
Boron
Semiconductor devices
Fluorine
spellingShingle Silicon
Transient enhanced diffusion (TED)
Organometallic compounds
Boron compounds
Boron
Semiconductor devices
Fluorine
Chuah Soo Kiet
Investigation and Modeling of Boron Diffusion Reduction in Silicon by Flourine Implantation using Numerical Simulation
description Access is limited to UniMAP community.
author2 Sharifah Norfaezah Sabki (Advisor)
author_facet Sharifah Norfaezah Sabki (Advisor)
Chuah Soo Kiet
format Learning Object
author Chuah Soo Kiet
author_sort Chuah Soo Kiet
title Investigation and Modeling of Boron Diffusion Reduction in Silicon by Flourine Implantation using Numerical Simulation
title_short Investigation and Modeling of Boron Diffusion Reduction in Silicon by Flourine Implantation using Numerical Simulation
title_full Investigation and Modeling of Boron Diffusion Reduction in Silicon by Flourine Implantation using Numerical Simulation
title_fullStr Investigation and Modeling of Boron Diffusion Reduction in Silicon by Flourine Implantation using Numerical Simulation
title_full_unstemmed Investigation and Modeling of Boron Diffusion Reduction in Silicon by Flourine Implantation using Numerical Simulation
title_sort investigation and modeling of boron diffusion reduction in silicon by flourine implantation using numerical simulation
publisher Universiti Malaysia Perlis
publishDate 2008
url http://dspace.unimap.edu.my/xmlui/handle/123456789/1348
_version_ 1643787261682122752
score 13.211869

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