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The Effect of Power Density on the Surface Layer of Amorphous Thin Film

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Bibliographic Details
Main Author: Ahmad Fadzil, Izaharuddin
Other Authors: Sanna Taking (Advisor)
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis 2008
Subjects:
Silicon
Amorphous silicon (a-Si)
X-Ray Diffraction (XRD
Thin film transistors (TFTs)
Surface chemistry
Power density
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1337
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spelling my.unimap-13372009-04-16T03:17:22Z The Effect of Power Density on the Surface Layer of Amorphous Thin Film Ahmad Fadzil, Izaharuddin Sanna Taking (Advisor) Silicon Amorphous silicon (a-Si) X-Ray Diffraction (XRD Thin film transistors (TFTs) Surface chemistry Power density Access is limited to UniMAP community. The development of amorphous silicon (a-Si) device technology since the advent of the first solar cell in 1974 has been truly spectacular with commercial products such as photocopiers, laser printers, facsimile machines, liquid crystal display televisions and solar cells now utilizing a-Si. Solar cells are designed to convert at least a portion of available light into electrical energy. Amorphous silicon (a-Si) is the non-crystalline form of silicon. The purpose of this project is to fabricate an amorphous silicon thin film with different values of power density of 10W, 15W, 20W and 25W. A part of the samples is checked using Atomic Force Microscopy (AFM) to check the characteristic of the samples and to verify the sample surface roughness. Besides that, the others samples are also checked with X-Ray Diffraction (XRD). The purpose of this procedure is to check the crystalline level of amorphous silicon. The samples that used are n-type substrate, p-type substrate and corning glass #7059. From the results, it is found that the best sample which has the potential to be amorphous silicon is corning glass. This is because the corning glass samples were showed the theoretical result which is when mean grain size increased, the RMS values decreased. The best parameters to produce amorphous silicon are at power density of 15 to 20 Watt. It is because this sample showed a smooth surface as compared to other samples. The lowest RMS value indicates a smooth surface due to the ability of electron mobility on the surface. 2008-06-30T04:08:06Z 2008-06-30T04:08:06Z 2007-03 Learning Object http://hdl.handle.net/123456789/1337 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Silicon
Amorphous silicon (a-Si)
X-Ray Diffraction (XRD
Thin film transistors (TFTs)
Surface chemistry
Power density
spellingShingle Silicon
Amorphous silicon (a-Si)
X-Ray Diffraction (XRD
Thin film transistors (TFTs)
Surface chemistry
Power density
Ahmad Fadzil, Izaharuddin
The Effect of Power Density on the Surface Layer of Amorphous Thin Film
description Access is limited to UniMAP community.
author2 Sanna Taking (Advisor)
author_facet Sanna Taking (Advisor)
Ahmad Fadzil, Izaharuddin
format Learning Object
author Ahmad Fadzil, Izaharuddin
author_sort Ahmad Fadzil, Izaharuddin
title The Effect of Power Density on the Surface Layer of Amorphous Thin Film
title_short The Effect of Power Density on the Surface Layer of Amorphous Thin Film
title_full The Effect of Power Density on the Surface Layer of Amorphous Thin Film
title_fullStr The Effect of Power Density on the Surface Layer of Amorphous Thin Film
title_full_unstemmed The Effect of Power Density on the Surface Layer of Amorphous Thin Film
title_sort effect of power density on the surface layer of amorphous thin film
publisher Universiti Malaysia Perlis
publishDate 2008
url http://dspace.unimap.edu.my/xmlui/handle/123456789/1337
_version_ 1643787259294515200
score 13.222552

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