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Organic field-effect transistors with reversible threshold voltage shifts for memory element

We introduce an charge-accepting layer on a poly(methyl methacrylate) (PMMA) dielectric to investigate the reversible threshold voltage (V) shifts in all-polymer n-channel organic field-effect transistor (OFET) using an organic semiconductor of an poly{[N,N’-bis(2-octyldodecyl)-naphthalene-1,4,5,8-b...

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Main Authors: Khairul Anuar Mohamad, Afishah Alias, Ismail Saad, Katsuhiro Uesugi, Hisashi Fukuda
Format: Article
Language:English
Published: United Kingdom Simulation Society 2012
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:https://eprints.ums.edu.my/id/eprint/19675/1/Organic%20field.pdf
https://eprints.ums.edu.my/id/eprint/19675/
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spelling my.ums.eprints.196752018-04-02T06:17:47Z https://eprints.ums.edu.my/id/eprint/19675/ Organic field-effect transistors with reversible threshold voltage shifts for memory element Khairul Anuar Mohamad Afishah Alias Ismail Saad Katsuhiro Uesugi Hisashi Fukuda TK Electrical engineering. Electronics Nuclear engineering We introduce an charge-accepting layer on a poly(methyl methacrylate) (PMMA) dielectric to investigate the reversible threshold voltage (V) shifts in all-polymer n-channel organic field-effect transistor (OFET) using an organic semiconductor of an poly{[N,N’-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5’-(2,2’-bithiophene)} (P(NDI2OD-T2)). Top contact drain-source with a bottom-gate contact structure device exhibited a unipolar property with n-channel behavior. Furthermore, the existence of poly(3-hexylthiophene) (P3HT) films as a charge-accepting-like storage layers resulted in a reversible Vth shifts upon the application of external gate bias (V). Hence, all-polymer organic transistor with the charge-accepting layer exhibited a large memory window (?V th bias = 10.7 V) for write and erase electrically without major degradation in saturation mobility (µsat =1.8~2.8×10-4 cm2V-1s-1). United Kingdom Simulation Society 2012 Article PeerReviewed text en https://eprints.ums.edu.my/id/eprint/19675/1/Organic%20field.pdf Khairul Anuar Mohamad and Afishah Alias and Ismail Saad and Katsuhiro Uesugi and Hisashi Fukuda (2012) Organic field-effect transistors with reversible threshold voltage shifts for memory element. International Journal of Simulation: Systems, Science and Technology, 113. pp. 42-47. ISSN 1473-8031
institution Universiti Malaysia Sabah
building UMS Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Sabah
content_source UMS Institutional Repository
url_provider http://eprints.ums.edu.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Khairul Anuar Mohamad
Afishah Alias
Ismail Saad
Katsuhiro Uesugi
Hisashi Fukuda
Organic field-effect transistors with reversible threshold voltage shifts for memory element
description We introduce an charge-accepting layer on a poly(methyl methacrylate) (PMMA) dielectric to investigate the reversible threshold voltage (V) shifts in all-polymer n-channel organic field-effect transistor (OFET) using an organic semiconductor of an poly{[N,N’-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5’-(2,2’-bithiophene)} (P(NDI2OD-T2)). Top contact drain-source with a bottom-gate contact structure device exhibited a unipolar property with n-channel behavior. Furthermore, the existence of poly(3-hexylthiophene) (P3HT) films as a charge-accepting-like storage layers resulted in a reversible Vth shifts upon the application of external gate bias (V). Hence, all-polymer organic transistor with the charge-accepting layer exhibited a large memory window (?V th bias = 10.7 V) for write and erase electrically without major degradation in saturation mobility (µsat =1.8~2.8×10-4 cm2V-1s-1).
format Article
author Khairul Anuar Mohamad
Afishah Alias
Ismail Saad
Katsuhiro Uesugi
Hisashi Fukuda
author_facet Khairul Anuar Mohamad
Afishah Alias
Ismail Saad
Katsuhiro Uesugi
Hisashi Fukuda
author_sort Khairul Anuar Mohamad
title Organic field-effect transistors with reversible threshold voltage shifts for memory element
title_short Organic field-effect transistors with reversible threshold voltage shifts for memory element
title_full Organic field-effect transistors with reversible threshold voltage shifts for memory element
title_fullStr Organic field-effect transistors with reversible threshold voltage shifts for memory element
title_full_unstemmed Organic field-effect transistors with reversible threshold voltage shifts for memory element
title_sort organic field-effect transistors with reversible threshold voltage shifts for memory element
publisher United Kingdom Simulation Society
publishDate 2012
url https://eprints.ums.edu.my/id/eprint/19675/1/Organic%20field.pdf
https://eprints.ums.edu.my/id/eprint/19675/
_version_ 1760229612722323456
score 13.211869

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