InGaN photocell significant efficiency enhancement on Si – an influence of interlayer physical properties
Nearly similar molar ratio of in and Ga in indium gallium nitride (InGaN) /Si photocells prefers to match InGaN conduction level energy to Si valance energy band for ohmic contact between two cells. At high temperature fabrication process, InGaN–Si interface shows highly defecting prone. Considering...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
John Wiley & Sons Ltd
2016
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| Subjects: | |
| Online Access: | https://eprints.ums.edu.my/id/eprint/18606/1/InGaN%20photocell.pdf https://eprints.ums.edu.my/id/eprint/18606/ http://doi.org/10.1002/er.3520 |
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