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The impact of channel fin width on electrical characteristics of Si-FinFET

This paper studies the impact of fin width of channel on temperature and electrical characteristics of fin field-effect transistor (FinFET). The simulation tool multi-gate field effect transistor (MuGFET) has been used to examine the FinFET characteristics. Transfer characteristics with various temp...

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Main Authors: Atalla, Y., Hashim, Y., Abdul Nasir, Abd Ghafar
Format: Article
Language:English
Published: Institute of Advanced Engineering and Science 2022
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://umpir.ump.edu.my/id/eprint/33072/1/The%20impact%20of%20channel%20fin%20width%20on%20electrical%20characteristics%20of%20Si-FinFET.pdf
http://umpir.ump.edu.my/id/eprint/33072/
https://doi.org/10.11591/ijece.v12i1.pp201-207
https://doi.org/10.11591/ijece.v12i1.pp201-207
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spelling my.ump.umpir.330722022-04-20T05:01:29Z http://umpir.ump.edu.my/id/eprint/33072/ The impact of channel fin width on electrical characteristics of Si-FinFET Atalla, Y. Hashim, Y. Abdul Nasir, Abd Ghafar TK Electrical engineering. Electronics Nuclear engineering This paper studies the impact of fin width of channel on temperature and electrical characteristics of fin field-effect transistor (FinFET). The simulation tool multi-gate field effect transistor (MuGFET) has been used to examine the FinFET characteristics. Transfer characteristics with various temperatures and channel fin width (WF=5, 10, 20, 40, and 80 nm) are at first simulated in this study. The results show that the increasing of environmental temperature tends to increase threshold voltage, while the subthreshold swing (SS) and drain-induced barrier lowering (DIBL) rise with rising working temperature. Also, the threshold voltage decreases with increasing channel fin width of transistor, while the SS and DIBL increase with increasing channel fin width of transistor, at minimum channel fin width, the SS is very near to the best and ideal then its value grows and going far from the ideal value with increasing channel fin width. So, according to these conditions, the minimum value as possible of fin width is the preferable one for FinFET with better electrical characteristics. Institute of Advanced Engineering and Science 2022-02 Article PeerReviewed pdf en cc_by_sa_4 http://umpir.ump.edu.my/id/eprint/33072/1/The%20impact%20of%20channel%20fin%20width%20on%20electrical%20characteristics%20of%20Si-FinFET.pdf Atalla, Y. and Hashim, Y. and Abdul Nasir, Abd Ghafar (2022) The impact of channel fin width on electrical characteristics of Si-FinFET. International Journal of Electrical and Computer Engineering, 12 (1). pp. 201-207. ISSN 2088-8708 https://doi.org/10.11591/ijece.v12i1.pp201-207 https://doi.org/10.11591/ijece.v12i1.pp201-207
institution Universiti Malaysia Pahang
building UMP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Pahang
content_source UMP Institutional Repository
url_provider http://umpir.ump.edu.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Atalla, Y.
Hashim, Y.
Abdul Nasir, Abd Ghafar
The impact of channel fin width on electrical characteristics of Si-FinFET
description This paper studies the impact of fin width of channel on temperature and electrical characteristics of fin field-effect transistor (FinFET). The simulation tool multi-gate field effect transistor (MuGFET) has been used to examine the FinFET characteristics. Transfer characteristics with various temperatures and channel fin width (WF=5, 10, 20, 40, and 80 nm) are at first simulated in this study. The results show that the increasing of environmental temperature tends to increase threshold voltage, while the subthreshold swing (SS) and drain-induced barrier lowering (DIBL) rise with rising working temperature. Also, the threshold voltage decreases with increasing channel fin width of transistor, while the SS and DIBL increase with increasing channel fin width of transistor, at minimum channel fin width, the SS is very near to the best and ideal then its value grows and going far from the ideal value with increasing channel fin width. So, according to these conditions, the minimum value as possible of fin width is the preferable one for FinFET with better electrical characteristics.
format Article
author Atalla, Y.
Hashim, Y.
Abdul Nasir, Abd Ghafar
author_facet Atalla, Y.
Hashim, Y.
Abdul Nasir, Abd Ghafar
author_sort Atalla, Y.
title The impact of channel fin width on electrical characteristics of Si-FinFET
title_short The impact of channel fin width on electrical characteristics of Si-FinFET
title_full The impact of channel fin width on electrical characteristics of Si-FinFET
title_fullStr The impact of channel fin width on electrical characteristics of Si-FinFET
title_full_unstemmed The impact of channel fin width on electrical characteristics of Si-FinFET
title_sort impact of channel fin width on electrical characteristics of si-finfet
publisher Institute of Advanced Engineering and Science
publishDate 2022
url http://umpir.ump.edu.my/id/eprint/33072/1/The%20impact%20of%20channel%20fin%20width%20on%20electrical%20characteristics%20of%20Si-FinFET.pdf
http://umpir.ump.edu.my/id/eprint/33072/
https://doi.org/10.11591/ijece.v12i1.pp201-207
https://doi.org/10.11591/ijece.v12i1.pp201-207
_version_ 1731225777747263488
score 13.211869

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