Temperature characteristics of Gate all around nanowire channel Si-TFET
This paper study the impact of working temperature on the electrical characteristics of gate all around nanowire channel Si-TFET and examines the effect of working temperature on threshold voltage, transcondactance (gm), ION/IOFF ratio, drain induced barrier lowering (DIBL), and sub-threshold swing...
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
IOP Publishing
2021
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| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/32198/1/Temperature%20characteristics%20of%20Gate%20all%20around%20nanowire%20channel.pdf http://umpir.ump.edu.my/id/eprint/32198/ https://doi.org/10.1088/1742-6596/1755/1/012045 |
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| Summary: | This paper study the impact of working temperature on the electrical characteristics of gate all around nanowire channel Si-TFET and examines the effect of working temperature on threshold voltage, transcondactance (gm), ION/IOFF ratio, drain induced barrier lowering (DIBL), and sub-threshold swing (SS). The (Silvaco) simulation tool has been used to investigate the working temperature on the Si-TFET characteristics. The temperature range in this study is from -25 to 150°C. The results indicate that the TFET must work in electronic circuits with the lower temperature as possible to get better performances. Furthermore, the TFET has good performances as a temperature nanosensor with diode connection mode under ON conditions. |
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