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Electrical characterization of Ge-FinFET transistor based on nanoscale channel dimensions

Nano-electronic applications have benefited enormously from the great advancement in the emerging Nano-technology industry. The tremendous downscaling of the transistors' dimensions has enabled the placement of over 100 million transistors on a single chip thus reduced cost, increased functiona...

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Main Authors: Mahmood, Ahmed, Jabbar, Waheb A., Hashim, Yasir, Hadi, Manap
Format: Article
Language:English
Published: Sumy State University 2019
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
TS Manufactures
Online Access:http://umpir.ump.edu.my/id/eprint/24742/1/Electrical%20%D0%A1haracterization%20of%20Ge-FinFET%20Transistor.pdf
http://umpir.ump.edu.my/id/eprint/24742/
https://doi.org/10.21272/jnep.11(1).01011
https://doi.org/10.21272/jnep.11(1).01011
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spelling my.ump.umpir.247422019-06-12T02:26:51Z http://umpir.ump.edu.my/id/eprint/24742/ Electrical characterization of Ge-FinFET transistor based on nanoscale channel dimensions Mahmood, Ahmed Jabbar, Waheb A. Hashim, Yasir Hadi, Manap TK Electrical engineering. Electronics Nuclear engineering TS Manufactures Nano-electronic applications have benefited enormously from the great advancement in the emerging Nano-technology industry. The tremendous downscaling of the transistors' dimensions has enabled the placement of over 100 million transistors on a single chip thus reduced cost, increased functionality and enhanced performance of integrated circuits (ICs). However, reducing size of the conventional planar transistors would be exceptionally challenging due to leakages electrostatics and other fabrication issues. Fin Field Effect Transistor (FinFET) shows a great potential in scalability and manufacturability as a promising candidate and a successor to conventional planar devices in nanoscale technologies. The structure of FinFET provides superior electrical control over the channel conduction, thus it has attracted widespread interest of researchers in both academia and industry. However, aggressively scaling down of channel dimensions, will degrade the overall performance due to detrimental short channel effects. In this paper, we investigate the impact of downscaling of nano-channel dimensions of Germanium Fin Feld Effect Transistor (Ge-FinFET) on electrical characteristics of the transistor, namely; ION/IOFF ratio, Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to conduct a simulation study to achieve optimal channel dimensions by considering channel length (L), width (W), and oxide thickness (TOX) individually. In addition, the effects of simultaneous consideration of all dimensions by exploiting a scaling factor, K was evaluated. According to the obtained simulation results, the best performance of Ge-FinFET was achieved at a minimal scaling factor, K = 0.25 with 5 nm channel length, 2.5 nm width, and 0.625 nm oxide thickness. Sumy State University 2019-02-25 Article PeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/24742/1/Electrical%20%D0%A1haracterization%20of%20Ge-FinFET%20Transistor.pdf Mahmood, Ahmed and Jabbar, Waheb A. and Hashim, Yasir and Hadi, Manap (2019) Electrical characterization of Ge-FinFET transistor based on nanoscale channel dimensions. Journal of Nano- and Electronic Physics, 11 (1). pp. 1-5. ISSN 2077-6772 https://doi.org/10.21272/jnep.11(1).01011 https://doi.org/10.21272/jnep.11(1).01011
institution Universiti Malaysia Pahang
building UMP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Pahang
content_source UMP Institutional Repository
url_provider http://umpir.ump.edu.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
TS Manufactures
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
TS Manufactures
Mahmood, Ahmed
Jabbar, Waheb A.
Hashim, Yasir
Hadi, Manap
Electrical characterization of Ge-FinFET transistor based on nanoscale channel dimensions
description Nano-electronic applications have benefited enormously from the great advancement in the emerging Nano-technology industry. The tremendous downscaling of the transistors' dimensions has enabled the placement of over 100 million transistors on a single chip thus reduced cost, increased functionality and enhanced performance of integrated circuits (ICs). However, reducing size of the conventional planar transistors would be exceptionally challenging due to leakages electrostatics and other fabrication issues. Fin Field Effect Transistor (FinFET) shows a great potential in scalability and manufacturability as a promising candidate and a successor to conventional planar devices in nanoscale technologies. The structure of FinFET provides superior electrical control over the channel conduction, thus it has attracted widespread interest of researchers in both academia and industry. However, aggressively scaling down of channel dimensions, will degrade the overall performance due to detrimental short channel effects. In this paper, we investigate the impact of downscaling of nano-channel dimensions of Germanium Fin Feld Effect Transistor (Ge-FinFET) on electrical characteristics of the transistor, namely; ION/IOFF ratio, Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to conduct a simulation study to achieve optimal channel dimensions by considering channel length (L), width (W), and oxide thickness (TOX) individually. In addition, the effects of simultaneous consideration of all dimensions by exploiting a scaling factor, K was evaluated. According to the obtained simulation results, the best performance of Ge-FinFET was achieved at a minimal scaling factor, K = 0.25 with 5 nm channel length, 2.5 nm width, and 0.625 nm oxide thickness.
format Article
author Mahmood, Ahmed
Jabbar, Waheb A.
Hashim, Yasir
Hadi, Manap
author_facet Mahmood, Ahmed
Jabbar, Waheb A.
Hashim, Yasir
Hadi, Manap
author_sort Mahmood, Ahmed
title Electrical characterization of Ge-FinFET transistor based on nanoscale channel dimensions
title_short Electrical characterization of Ge-FinFET transistor based on nanoscale channel dimensions
title_full Electrical characterization of Ge-FinFET transistor based on nanoscale channel dimensions
title_fullStr Electrical characterization of Ge-FinFET transistor based on nanoscale channel dimensions
title_full_unstemmed Electrical characterization of Ge-FinFET transistor based on nanoscale channel dimensions
title_sort electrical characterization of ge-finfet transistor based on nanoscale channel dimensions
publisher Sumy State University
publishDate 2019
url http://umpir.ump.edu.my/id/eprint/24742/1/Electrical%20%D0%A1haracterization%20of%20Ge-FinFET%20Transistor.pdf
http://umpir.ump.edu.my/id/eprint/24742/
https://doi.org/10.21272/jnep.11(1).01011
https://doi.org/10.21272/jnep.11(1).01011
_version_ 1643669902964293632
score 13.211869

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