Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films

Copper(I) iodide (CuI) has received considerable scrutiny as a hole transport material in solid-state dye-sensitized solar cells (ss-DSSC), amidst challenging issues such as rapid crystallization, pore filing, and dye desorption. This paper would attempt to study the influence of heat on various pr...

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Main Authors: Zulkifly, Aziz, Ayib Rosdi, Zainun, Saifful Kamaluddin, Muzakir
Format: Conference or Workshop Item
Language:English
Published: Universiti Malaysia Pahang 2016
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Online Access:http://umpir.ump.edu.my/id/eprint/15911/1/P031%20pg206-211.pdf
http://umpir.ump.edu.my/id/eprint/15911/
http://ee.ump.edu.my/ncon/wp-content/uploads/2016/10/Proceeding-NCON-PGR-2016.zip
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spelling my.ump.umpir.159112018-10-31T07:03:02Z http://umpir.ump.edu.my/id/eprint/15911/ Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films Zulkifly, Aziz Ayib Rosdi, Zainun Saifful Kamaluddin, Muzakir TK Electrical engineering. Electronics Nuclear engineering Copper(I) iodide (CuI) has received considerable scrutiny as a hole transport material in solid-state dye-sensitized solar cells (ss-DSSC), amidst challenging issues such as rapid crystallization, pore filing, and dye desorption. This paper would attempt to study the influence of heat on various properties of CuI thin film in the presence of chelating agent tetramethylethylenediamine (TMEDA) in the CuI precursor solution at fixed CuI:TMEDA molar ratio of 1:1. Although heat did not seem to alter the morphology of the thin film, slight broadening was observed in the diffractogram peaks which suggested reduction in particle size. Photoluminescence (PL) spectra for all the samples which were annealed below 80 ⁰C were red shifted which suggested than some of the absorbed energy has been lost most likely due to non-radiative emission usually caused by deep space traps. In other word, this finding also suggest that an optimum heating temperature would mend the material’s internal structure leading to fewer formation of deep space traps normally associated with the presence of internal stress in the material. At an optimum annealing temperature of 80 ⁰C, thin film resistivity fell from 6.2 Ω.cm to 4.7 Ω.cm and achieved a remarkable conductivity of 165 S/cm2. These remarkable findings seems to be in accord with our argument that CuITMEDA complex could find its application as a hole transport material (HTM) in ss-DSSC Universiti Malaysia Pahang 2016 Conference or Workshop Item PeerReviewed application/pdf en http://umpir.ump.edu.my/id/eprint/15911/1/P031%20pg206-211.pdf Zulkifly, Aziz and Ayib Rosdi, Zainun and Saifful Kamaluddin, Muzakir (2016) Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films. In: Proceedings of The National Conference for Postgraduate Research (NCON-PGR 2016), 24-25 September 2016 , Universiti Malaysia Pahang (UMP), Pekan, Pahang. pp. 206-211.. http://ee.ump.edu.my/ncon/wp-content/uploads/2016/10/Proceeding-NCON-PGR-2016.zip
institution Universiti Malaysia Pahang
building UMP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Pahang
content_source UMP Institutional Repository
url_provider http://umpir.ump.edu.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Zulkifly, Aziz
Ayib Rosdi, Zainun
Saifful Kamaluddin, Muzakir
Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films
description Copper(I) iodide (CuI) has received considerable scrutiny as a hole transport material in solid-state dye-sensitized solar cells (ss-DSSC), amidst challenging issues such as rapid crystallization, pore filing, and dye desorption. This paper would attempt to study the influence of heat on various properties of CuI thin film in the presence of chelating agent tetramethylethylenediamine (TMEDA) in the CuI precursor solution at fixed CuI:TMEDA molar ratio of 1:1. Although heat did not seem to alter the morphology of the thin film, slight broadening was observed in the diffractogram peaks which suggested reduction in particle size. Photoluminescence (PL) spectra for all the samples which were annealed below 80 ⁰C were red shifted which suggested than some of the absorbed energy has been lost most likely due to non-radiative emission usually caused by deep space traps. In other word, this finding also suggest that an optimum heating temperature would mend the material’s internal structure leading to fewer formation of deep space traps normally associated with the presence of internal stress in the material. At an optimum annealing temperature of 80 ⁰C, thin film resistivity fell from 6.2 Ω.cm to 4.7 Ω.cm and achieved a remarkable conductivity of 165 S/cm2. These remarkable findings seems to be in accord with our argument that CuITMEDA complex could find its application as a hole transport material (HTM) in ss-DSSC
format Conference or Workshop Item
author Zulkifly, Aziz
Ayib Rosdi, Zainun
Saifful Kamaluddin, Muzakir
author_facet Zulkifly, Aziz
Ayib Rosdi, Zainun
Saifful Kamaluddin, Muzakir
author_sort Zulkifly, Aziz
title Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films
title_short Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films
title_full Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films
title_fullStr Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films
title_full_unstemmed Influence of Annealing Temperatures on Properties in Chelate Based CuI Thin Films
title_sort influence of annealing temperatures on properties in chelate based cui thin films
publisher Universiti Malaysia Pahang
publishDate 2016
url http://umpir.ump.edu.my/id/eprint/15911/1/P031%20pg206-211.pdf
http://umpir.ump.edu.my/id/eprint/15911/
http://ee.ump.edu.my/ncon/wp-content/uploads/2016/10/Proceeding-NCON-PGR-2016.zip
_version_ 1643667800599822336
score 13.211869