Cover Image

A New Simulation Model for Nanowire-CMOS Inverter Circuit

This This paper is to suggest a new model for predicting the static characteristics of nanowire-CMOS (NW-CMOS) inverter. This model depends on experimental (or simulated) output characteristics of load and driver transistors separately as an input data. This model used in this research to investigat...

Full description

Saved in:
Bibliographic Details
Main Author: Naif, Yasir Hashim
Format: Conference or Workshop Item
Language:English
English
Published: IEEE 2016
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://umpir.ump.edu.my/id/eprint/14448/1/2016-08-38-0021.pdf
http://umpir.ump.edu.my/id/eprint/14448/7/ftech-2016-yasir-New%20Simulation%20Model%20for%20Nanowire-CMOS%20Inverter1.pdf
http://umpir.ump.edu.my/id/eprint/14448/
http://icaicta2016.usm.my/
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.ump.umpir.14448
record_format eprints
spelling my.ump.umpir.144482017-08-22T06:52:46Z http://umpir.ump.edu.my/id/eprint/14448/ A New Simulation Model for Nanowire-CMOS Inverter Circuit Naif, Yasir Hashim TK Electrical engineering. Electronics Nuclear engineering This This paper is to suggest a new model for predicting the static characteristics of nanowire-CMOS (NW-CMOS) inverter. This model depends on experimental (or simulated) output characteristics of load and driver transistors separately as an input data. This model used in this research to investigate the effect of length (L), oxide thickness (Tox) and numbers of nanowires in P and N-channel SiNWT on the NW-CMOS inverter output and current characteristics. This study used MuGFET simulation tool to produce the output Characteristics of SiNWT which used as input to a designee MATLAB software to calculate the characteristics of NW-CMOS. The output (Vout-Vin) and current (Iout-Vin) characteristics that calculated shows excellent behaviors for digital applications. IEEE 2016 Conference or Workshop Item PeerReviewed application/pdf en http://umpir.ump.edu.my/id/eprint/14448/1/2016-08-38-0021.pdf application/pdf en http://umpir.ump.edu.my/id/eprint/14448/7/ftech-2016-yasir-New%20Simulation%20Model%20for%20Nanowire-CMOS%20Inverter1.pdf Naif, Yasir Hashim (2016) A New Simulation Model for Nanowire-CMOS Inverter Circuit. In: The 2016 International Conference on Advanced Informatics: Concepts, Theory and Application (ICAIATA 2016), 16-19 August 2016 , Penang, Malaysia. pp. 1-6.. ISBN 978-1-5090-1636-5 http://icaicta2016.usm.my/
institution Universiti Malaysia Pahang
building UMP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Pahang
content_source UMP Institutional Repository
url_provider http://umpir.ump.edu.my/
language English
English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Naif, Yasir Hashim
A New Simulation Model for Nanowire-CMOS Inverter Circuit
description This This paper is to suggest a new model for predicting the static characteristics of nanowire-CMOS (NW-CMOS) inverter. This model depends on experimental (or simulated) output characteristics of load and driver transistors separately as an input data. This model used in this research to investigate the effect of length (L), oxide thickness (Tox) and numbers of nanowires in P and N-channel SiNWT on the NW-CMOS inverter output and current characteristics. This study used MuGFET simulation tool to produce the output Characteristics of SiNWT which used as input to a designee MATLAB software to calculate the characteristics of NW-CMOS. The output (Vout-Vin) and current (Iout-Vin) characteristics that calculated shows excellent behaviors for digital applications.
format Conference or Workshop Item
author Naif, Yasir Hashim
author_facet Naif, Yasir Hashim
author_sort Naif, Yasir Hashim
title A New Simulation Model for Nanowire-CMOS Inverter Circuit
title_short A New Simulation Model for Nanowire-CMOS Inverter Circuit
title_full A New Simulation Model for Nanowire-CMOS Inverter Circuit
title_fullStr A New Simulation Model for Nanowire-CMOS Inverter Circuit
title_full_unstemmed A New Simulation Model for Nanowire-CMOS Inverter Circuit
title_sort new simulation model for nanowire-cmos inverter circuit
publisher IEEE
publishDate 2016
url http://umpir.ump.edu.my/id/eprint/14448/1/2016-08-38-0021.pdf
http://umpir.ump.edu.my/id/eprint/14448/7/ftech-2016-yasir-New%20Simulation%20Model%20for%20Nanowire-CMOS%20Inverter1.pdf
http://umpir.ump.edu.my/id/eprint/14448/
http://icaicta2016.usm.my/
_version_ 1643667435574788096
score 13.211869

Similar Items