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The effect of different dopant site (Cu and Ca) by magnesium on CaCu3Ti4O12 dielectric properties

CaCu3Ti4O12 (CCTO) is known as a material that possesses high dielectric constant (εr ~ 104) and can be the best candidate to be used in electronic components that can be operated at low and high frequency. Unfortunately, high dielectric loss of CCTO can be the main obstacle for this material to be...

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Main Authors: Mohd Fariz Ab Rahman, Sabar derita Hutagalung, Zainal Arifin Ahmad, Mohd Fadzil Ain, Julie Juliewatty Mohamed
Format: Non-Indexed Article
Published: Springer 2015
Online Access:http://discol.umk.edu.my/id/eprint/8225/
http://link.springer.com/article/10.1007/s10854-015-2929-z
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spelling my.umk.eprints.82252022-05-23T10:26:01Z http://discol.umk.edu.my/id/eprint/8225/ The effect of different dopant site (Cu and Ca) by magnesium on CaCu3Ti4O12 dielectric properties Mohd Fariz Ab Rahman Sabar derita Hutagalung Zainal Arifin Ahmad Mohd Fadzil Ain Julie Juliewatty Mohamed CaCu3Ti4O12 (CCTO) is known as a material that possesses high dielectric constant (εr ~ 104) and can be the best candidate to be used in electronic components that can be operated at low and high frequency. Unfortunately, high dielectric loss of CCTO can be the main obstacle for this material to be commercialized. In this paper, Mg was used as dopant into CCTO ceramics in order to reduce dielectric loss of CCTO and the dielectric properties of CCTO samples were characterized at high frequency (1 MHz–1 GHz). The samples were prepared via solid state method. Mg was used as dopant at different site of CCTO (Cu and Ca sites). All mixed powders were calcined at 900 °C for 12 h and subsequently sintered at 1030 °C for 10 h. X-ray diffractometer analysis proved the formation of complete single phase CCTO for all sintered samples. Scanning electron microscopy analysis showed the grain size became larger with the addition of dopant concentration. Enhanced dielectric constant was observed for most of the doped samples with most of the CaCu3−xMgxTi4O12 (Mg doped at Cu site) samples had higher dielectric constant and lower dielectric loss at frequency 1 MHz whereas the Ca1−xMgxCu3Ti4O12 (Mg doped at Ca site) samples exhibited higher dielectric constant and lower dielectric loss compared to the CaCu3−xMgxTi4O12 samples at 1 GHz. Thus, Mg replacement on Cu and Ca sites in CCTO gave a great influence on dielectric properties. Springer 2015 Non-Indexed Article NonPeerReviewed Mohd Fariz Ab Rahman and Sabar derita Hutagalung and Zainal Arifin Ahmad and Mohd Fadzil Ain and Julie Juliewatty Mohamed (2015) The effect of different dopant site (Cu and Ca) by magnesium on CaCu3Ti4O12 dielectric properties. Journal of Materials Science: Materials in Electronics, 26. pp. 3947-3956. ISSN 09574522 http://link.springer.com/article/10.1007/s10854-015-2929-z
institution Universiti Malaysia Kelantan
building Perpustakaan Universiti Malaysia Kelantan
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Kelantan
content_source UMK Institutional Repository
url_provider http://umkeprints.umk.edu.my/
description CaCu3Ti4O12 (CCTO) is known as a material that possesses high dielectric constant (εr ~ 104) and can be the best candidate to be used in electronic components that can be operated at low and high frequency. Unfortunately, high dielectric loss of CCTO can be the main obstacle for this material to be commercialized. In this paper, Mg was used as dopant into CCTO ceramics in order to reduce dielectric loss of CCTO and the dielectric properties of CCTO samples were characterized at high frequency (1 MHz–1 GHz). The samples were prepared via solid state method. Mg was used as dopant at different site of CCTO (Cu and Ca sites). All mixed powders were calcined at 900 °C for 12 h and subsequently sintered at 1030 °C for 10 h. X-ray diffractometer analysis proved the formation of complete single phase CCTO for all sintered samples. Scanning electron microscopy analysis showed the grain size became larger with the addition of dopant concentration. Enhanced dielectric constant was observed for most of the doped samples with most of the CaCu3−xMgxTi4O12 (Mg doped at Cu site) samples had higher dielectric constant and lower dielectric loss at frequency 1 MHz whereas the Ca1−xMgxCu3Ti4O12 (Mg doped at Ca site) samples exhibited higher dielectric constant and lower dielectric loss compared to the CaCu3−xMgxTi4O12 samples at 1 GHz. Thus, Mg replacement on Cu and Ca sites in CCTO gave a great influence on dielectric properties.
format Non-Indexed Article
author Mohd Fariz Ab Rahman
Sabar derita Hutagalung
Zainal Arifin Ahmad
Mohd Fadzil Ain
Julie Juliewatty Mohamed
spellingShingle Mohd Fariz Ab Rahman
Sabar derita Hutagalung
Zainal Arifin Ahmad
Mohd Fadzil Ain
Julie Juliewatty Mohamed
The effect of different dopant site (Cu and Ca) by magnesium on CaCu3Ti4O12 dielectric properties
author_facet Mohd Fariz Ab Rahman
Sabar derita Hutagalung
Zainal Arifin Ahmad
Mohd Fadzil Ain
Julie Juliewatty Mohamed
author_sort Mohd Fariz Ab Rahman
title The effect of different dopant site (Cu and Ca) by magnesium on CaCu3Ti4O12 dielectric properties
title_short The effect of different dopant site (Cu and Ca) by magnesium on CaCu3Ti4O12 dielectric properties
title_full The effect of different dopant site (Cu and Ca) by magnesium on CaCu3Ti4O12 dielectric properties
title_fullStr The effect of different dopant site (Cu and Ca) by magnesium on CaCu3Ti4O12 dielectric properties
title_full_unstemmed The effect of different dopant site (Cu and Ca) by magnesium on CaCu3Ti4O12 dielectric properties
title_sort effect of different dopant site (cu and ca) by magnesium on cacu3ti4o12 dielectric properties
publisher Springer
publishDate 2015
url http://discol.umk.edu.my/id/eprint/8225/
http://link.springer.com/article/10.1007/s10854-015-2929-z
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score 13.211869

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