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Device characterization based on stressor, geometric and process design considerations of fet technology / Nurul Aida Farhana Othman

The downscaling of complementary metal-oxide-semiconductor (CMOS) device has been tremendously feasible in the past couple of decades. This action has led to a constant escalation of devices count in a dense integrated circuit, hence an outstanding application of Moore’s law to the industry especial...

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書誌詳細
第一著者:	Nurul Aida Farhana, Othman
フォーマット:	学位論文
出版事項:	2018
主題:	TA Engineering (General). Civil engineering (General)
オンライン･アクセス:	http://studentsrepo.um.edu.my/9990/1/Nurul_Aida_Farhana_Binti_Othman.jpg http://studentsrepo.um.edu.my/9990/8/aida.pdf http://studentsrepo.um.edu.my/9990/
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