Degradation analysis based on design considerations of advanced-process MOSFET / Ainul Fatin Muhammad Alimin
The unceasing scaling of complementary metal-oxide-semiconductor (CMOS) technology has contributed to the steady increase in transistors performance for the past decades. However, it will also increase the power densities which will eventually leads to the increase in temperatures and other scaling...
Saved in:
Main Author: | Ainul Fatin, Muhammad Alimin |
---|---|
Format: | Thesis |
Published: |
2018
|
Subjects: | |
Online Access: | http://studentsrepo.um.edu.my/9116/1/Ainul_Fatin_Muhammad_Alimin.bmp http://studentsrepo.um.edu.my/9116/11/ainul.pdf http://studentsrepo.um.edu.my/9116/ |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Device design consideration for nanoscale MOSFET using semiconductor TCAD tools
by: Teoh, Chin Hong, et al.
Published: (2006) -
Analysis of lightweight box structure / Mohd Alimin Che Ali
by: Che Ali, Mohd Alimin
Published: (2002) -
Sistem kawalan pembangunan di dalam pengurusan alam sekitar / Alimin Omar
by: Omar, Alimin
Published: (1983) -
Radiation-induced degradation of silicon carbide MOSFETs – a review
by: Baba, Tamana, et al.
Published: (2024) -
Translation and psychometric properties of attitudes questionnaire into malay version / Nurul Asheera Alimin
by: Alimin, Nurul Asheera
Published: (2016)