Probing technique for energy distribution of positive charges in gate dielectrics and its application to lifetime prediction / Sharifah Fatmadiana Wan Muhamad Hatta
The continuous reduction of the dimensions of CMOS devices has increased the negative bias temperature instability (NBTI) of pMOSFETs to such a level that it is limiting their lifetime. This increase of NBTI is caused mainly by three factors: an increase of nitrogen concentration in gate dielectric,...
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| Format: | Thesis |
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2013
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| Online Access: | http://studentsrepo.um.edu.my/8287/5/Thesis_SharifahFatmadiana_Dec_2013.pdf http://studentsrepo.um.edu.my/8287/ |
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