Simulation framework of NBTI degradation in nano-scale p-MOSFETs from the perspective of hydrogen and non-hydrogen transport formalism / Hanim Hussin
The rapid downscaling of contemporary bulk CMOS devices has worsened the negative bias temperature instability (NBTI) of p-channel Metal-Oxide-Semiconductor-Field-Effect-Transistors (p-MOSFETs), which consequently degrades the performance and reduces the operational lifetime of the device. The main...
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| Format: | Thesis |
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2015
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| Online Access: | http://studentsrepo.um.edu.my/5936/1/ThesisHanim2015_040915.pdf http://studentsrepo.um.edu.my/5936/ |
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