Study of Schottky and Poole-Frenkel conduction mechanism in Fe304-gamma-Fe2O3/SiO2/n-type Si system / Adrian Chung Ning Hann
The advances of metal oxide semiconductor technology (MOS) have led to smaller devices being made where sizes of the devices keep getting smaller and compact. Hence, all the components of metal oxide semiconductor sizes are to be reduced without affecting the overall efficiency of the metal oxide se...
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| Format: | Thesis |
| Published: |
2021
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| Online Access: | http://studentsrepo.um.edu.my/13418/1/Adrian_Chung_Ning_Hann.jpg http://studentsrepo.um.edu.my/13418/8/adrian.pdf http://studentsrepo.um.edu.my/13418/ |
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| Summary: | The advances of metal oxide semiconductor technology (MOS) have led to smaller devices being made where sizes of the devices keep getting smaller and compact. Hence, all the components of metal oxide semiconductor sizes are to be reduced without affecting the overall efficiency of the metal oxide semiconductor. However, there is a problem in the silicon dioxide component of MOS as the sizes of the silicon oxide (SiO2) reduces, there is a possibility a current leakage to occur due to carrier direct tunneling effect passing through SiO2 which reduce the efficiency of the MOS. Therefore, a higher dielectric constant material where Fe3O4-γ-Fe2O3/SiO2/n-type (magnetite-maghemite nanoparticles with silicon dioxide) silicon system is chosen to tackle the problem. This material is to be study with the experiment data of the material in order to investigate the Schottky and Poole-Frenkel emission as well as to identify the dynamic dielectric constants of both emissions and barrier height of the Schottky emission of the material. The results show that the linear fitting of Schottky and Poole Frenkel emissions are well fitted with the standard model equations which suggested that both emissions are present during the experiment. Subsequently, the calculation and observation of the plotted graphs showed that the highest dynamic dielectric constant, kr of Schottky emission is 6.6927 at 200°C while the highest dynamic dielectric constant kr of Poole-Frenkel emission is 8.6505 at 150°C and the highest barrier height, ΦB of Schottky emission is 1.6242 at 200°C. In conclusion, the overall results show that the combination of Schottky and Poole-Frenkel conduction mechanisms are responsible for the soft breakdown, EB of Fe3O4-γ-Fe2O3/SiO2/n-type silicon system in a high electric field and high-temperature environment. |
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