Analog and short channel effects performance of sub-100 nm graded channel fully depleted silicon on insulator (SOI)
This paper presents the dependency of analog and short channel effects (SCEs) performance of 75 nm channel length fully-depleted Silicon On Insulator (SOI) device on the applied Graded Channel (GC) design. The comparative analysis between standard SOI (STD SOI) devices at doped channel and equivalen...
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| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2009
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/9912/1/analog_and_short_channel.pdf http://eprints.um.edu.my/9912/ |
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