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Direct growth and Photoluminescence of SiOx nanowires and aligned nanocakes by simple carbothermal evaporation

The growth of SiOx nanowires and nanocakes on an Au-coated n-type-Silicon (100) substrate was achieved via carbothermal evaporation. The effects of the Au layer thickness and the rapid heating rate on the morphology of obtained SiOx nanowires were investigated. A broad emission band from 290 to 600...

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Main Authors: Al-Ruqeishi, M.S., Nor, R.M., Amin, Y.M., Al-Azri, K.
Format: Article
Published: 2011
Subjects:
QC Physics
Online Access:http://eprints.um.edu.my/7856/
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spelling my.um.eprints.78562013-07-10T04:14:00Z http://eprints.um.edu.my/7856/ Direct growth and Photoluminescence of SiOx nanowires and aligned nanocakes by simple carbothermal evaporation Al-Ruqeishi, M.S. Nor, R.M. Amin, Y.M. Al-Azri, K. QC Physics The growth of SiOx nanowires and nanocakes on an Au-coated n-type-Silicon (100) substrate was achieved via carbothermal evaporation. The effects of the Au layer thickness and the rapid heating rate on the morphology of obtained SiOx nanowires were investigated. A broad emission band from 290 to 600 nm was observed in the photoluminescence (PL) spectrum of these nanowires. There are four PL peaks: one blue emission peak 485 nm (2.56 eV) two green bands centered at 502 nm (2.47 eV) and 524 nm (2.37 eV) for nanocakes and one ultraviolet emission peak at 350 nm (3.54 eV) and a hemisphere curve over the bluish green area taken for SiOx nanowires. These emissions may be related to the various oxygen defects and twofold coordinated silicon lone pair centers. 2011 Article PeerReviewed Al-Ruqeishi, M.S. and Nor, R.M. and Amin, Y.M. and Al-Azri, K. (2011) Direct growth and Photoluminescence of SiOx nanowires and aligned nanocakes by simple carbothermal evaporation. Silicon, 3 (3). pp. 145-151. ISSN 1876-990X 10.1007/s12633-011-9091-x
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic QC Physics
spellingShingle QC Physics
Al-Ruqeishi, M.S.
Nor, R.M.
Amin, Y.M.
Al-Azri, K.
Direct growth and Photoluminescence of SiOx nanowires and aligned nanocakes by simple carbothermal evaporation
description The growth of SiOx nanowires and nanocakes on an Au-coated n-type-Silicon (100) substrate was achieved via carbothermal evaporation. The effects of the Au layer thickness and the rapid heating rate on the morphology of obtained SiOx nanowires were investigated. A broad emission band from 290 to 600 nm was observed in the photoluminescence (PL) spectrum of these nanowires. There are four PL peaks: one blue emission peak 485 nm (2.56 eV) two green bands centered at 502 nm (2.47 eV) and 524 nm (2.37 eV) for nanocakes and one ultraviolet emission peak at 350 nm (3.54 eV) and a hemisphere curve over the bluish green area taken for SiOx nanowires. These emissions may be related to the various oxygen defects and twofold coordinated silicon lone pair centers.
format Article
author Al-Ruqeishi, M.S.
Nor, R.M.
Amin, Y.M.
Al-Azri, K.
author_facet Al-Ruqeishi, M.S.
Nor, R.M.
Amin, Y.M.
Al-Azri, K.
author_sort Al-Ruqeishi, M.S.
title Direct growth and Photoluminescence of SiOx nanowires and aligned nanocakes by simple carbothermal evaporation
title_short Direct growth and Photoluminescence of SiOx nanowires and aligned nanocakes by simple carbothermal evaporation
title_full Direct growth and Photoluminescence of SiOx nanowires and aligned nanocakes by simple carbothermal evaporation
title_fullStr Direct growth and Photoluminescence of SiOx nanowires and aligned nanocakes by simple carbothermal evaporation
title_full_unstemmed Direct growth and Photoluminescence of SiOx nanowires and aligned nanocakes by simple carbothermal evaporation
title_sort direct growth and photoluminescence of siox nanowires and aligned nanocakes by simple carbothermal evaporation
publishDate 2011
url http://eprints.um.edu.my/7856/
_version_ 1643688147727417344
score 13.211869

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