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Radial growth of slanting-columnar nanocrystalline Si on Si nanowires

The synthesis of Si nanowires was achieved via hot-wire chemical vapor deposition using an indium catalyst. In addition to the axial catalytic growth of Si nanowires, the radial growth of columnar structures occurred on the walls of the nanowires. The HRTEM results revealed that a mixture of amorpho...

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Main Authors: Chong, S.K., Goh, B.T., Aspanut, Z., Muhamad, M.R., Dee, C.F., Rahman, S.A.
Format: Article
Published: 2011
Subjects:
QC Physics
Online Access:http://eprints.um.edu.my/7375/
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spelling my.um.eprints.73752014-12-21T08:50:56Z http://eprints.um.edu.my/7375/ Radial growth of slanting-columnar nanocrystalline Si on Si nanowires Chong, S.K. Goh, B.T. Aspanut, Z. Muhamad, M.R. Dee, C.F. Rahman, S.A. QC Physics The synthesis of Si nanowires was achieved via hot-wire chemical vapor deposition using an indium catalyst. In addition to the axial catalytic growth of Si nanowires, the radial growth of columnar structures occurred on the walls of the nanowires. The HRTEM results revealed that a mixture of amorphous Si and nanocrystalline Si grains was present within the columnar structure. The nanocrystalline Si nanocolumns were slanted at an angle of similar to 66 degrees towards the wall of the NWs. The amorphous Si background in the XRD pattern and asymmetric broadening in the Si peak of the Raman spectra provided evidence for the formation of nanocrystalline Si. (C) 2011 Elsevier B.V. All rights reserved. 2011 Article PeerReviewed Chong, S.K. and Goh, B.T. and Aspanut, Z. and Muhamad, M.R. and Dee, C.F. and Rahman, S.A. (2011) Radial growth of slanting-columnar nanocrystalline Si on Si nanowires. Chemical Physics Letters, 515 (1-3). pp. 68-71. ISSN 0009-2614 10.1016/j.cplett.2011.08.046
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic QC Physics
spellingShingle QC Physics
Chong, S.K.
Goh, B.T.
Aspanut, Z.
Muhamad, M.R.
Dee, C.F.
Rahman, S.A.
Radial growth of slanting-columnar nanocrystalline Si on Si nanowires
description The synthesis of Si nanowires was achieved via hot-wire chemical vapor deposition using an indium catalyst. In addition to the axial catalytic growth of Si nanowires, the radial growth of columnar structures occurred on the walls of the nanowires. The HRTEM results revealed that a mixture of amorphous Si and nanocrystalline Si grains was present within the columnar structure. The nanocrystalline Si nanocolumns were slanted at an angle of similar to 66 degrees towards the wall of the NWs. The amorphous Si background in the XRD pattern and asymmetric broadening in the Si peak of the Raman spectra provided evidence for the formation of nanocrystalline Si. (C) 2011 Elsevier B.V. All rights reserved.
format Article
author Chong, S.K.
Goh, B.T.
Aspanut, Z.
Muhamad, M.R.
Dee, C.F.
Rahman, S.A.
author_facet Chong, S.K.
Goh, B.T.
Aspanut, Z.
Muhamad, M.R.
Dee, C.F.
Rahman, S.A.
author_sort Chong, S.K.
title Radial growth of slanting-columnar nanocrystalline Si on Si nanowires
title_short Radial growth of slanting-columnar nanocrystalline Si on Si nanowires
title_full Radial growth of slanting-columnar nanocrystalline Si on Si nanowires
title_fullStr Radial growth of slanting-columnar nanocrystalline Si on Si nanowires
title_full_unstemmed Radial growth of slanting-columnar nanocrystalline Si on Si nanowires
title_sort radial growth of slanting-columnar nanocrystalline si on si nanowires
publishDate 2011
url http://eprints.um.edu.my/7375/
_version_ 1643688028711944192
score 13.244745

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