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Formation of nano-crystalline phase in hydrogenated amorphous silicon thin film by plasma focus ion beam irradiation

A 3.3 kJ Mather type dense plasma focus device is used to generate a pulsed argon ion beam of 100 KeV in this work. Hydrogenated amorphous silicon (a-Si:H) film prepared by plasma enhanced chemical vapor deposition (PECVD) on c-Si substrate was irradiated with the argon ion beam produced by this den...

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Main Authors: Ngoi, S.K., Yap, S.L., Goh, B.T., Ritikos, R., Rahman, S.A., Wong, C.S.
Format: Article
Published: 2012
Subjects:
QC Physics
Online Access:http://eprints.um.edu.my/7354/
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spelling my.um.eprints.73542014-12-11T08:00:12Z http://eprints.um.edu.my/7354/ Formation of nano-crystalline phase in hydrogenated amorphous silicon thin film by plasma focus ion beam irradiation Ngoi, S.K. Yap, S.L. Goh, B.T. Ritikos, R. Rahman, S.A. Wong, C.S. QC Physics A 3.3 kJ Mather type dense plasma focus device is used to generate a pulsed argon ion beam of 100 KeV in this work. Hydrogenated amorphous silicon (a-Si:H) film prepared by plasma enhanced chemical vapor deposition (PECVD) on c-Si substrate was irradiated with the argon ion beam produced by this dense plasma focus device. The effects of exposure to a single, 5 and 10 shots of dense plasma focus argon ion beam irradiation on the surface morphology, crystallinity and chemical bonding properties of the a-Si:H films were studied using Field Emission Scanning Electron Microscope (FESEM), X-ray Diffraction (XRD), Raman scattering and Fourier Transform Infrared (FTIR) spectroscopy, respectively. Formation of nano-crystalline silicon phase along with increase in structural order and hydrogen content in the film structure has been observed when the a-Si:H film was irradiated with a single shot of dense plasma focus argon ion beam. Exposure to 5 and 10 shots of the dense plasma focus argon ion beam irradiation reduced the hydrogen content resulting in a decrease in crystallinity and structural order in the film structure. 2012 Article PeerReviewed Ngoi, S.K. and Yap, S.L. and Goh, B.T. and Ritikos, R. and Rahman, S.A. and Wong, C.S. (2012) Formation of nano-crystalline phase in hydrogenated amorphous silicon thin film by plasma focus ion beam irradiation. Journal of Fusion Energy, 31 (1). pp. 96-103. ISSN 0164-0313 10.1007/s10894-011-9435-y
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic QC Physics
spellingShingle QC Physics
Ngoi, S.K.
Yap, S.L.
Goh, B.T.
Ritikos, R.
Rahman, S.A.
Wong, C.S.
Formation of nano-crystalline phase in hydrogenated amorphous silicon thin film by plasma focus ion beam irradiation
description A 3.3 kJ Mather type dense plasma focus device is used to generate a pulsed argon ion beam of 100 KeV in this work. Hydrogenated amorphous silicon (a-Si:H) film prepared by plasma enhanced chemical vapor deposition (PECVD) on c-Si substrate was irradiated with the argon ion beam produced by this dense plasma focus device. The effects of exposure to a single, 5 and 10 shots of dense plasma focus argon ion beam irradiation on the surface morphology, crystallinity and chemical bonding properties of the a-Si:H films were studied using Field Emission Scanning Electron Microscope (FESEM), X-ray Diffraction (XRD), Raman scattering and Fourier Transform Infrared (FTIR) spectroscopy, respectively. Formation of nano-crystalline silicon phase along with increase in structural order and hydrogen content in the film structure has been observed when the a-Si:H film was irradiated with a single shot of dense plasma focus argon ion beam. Exposure to 5 and 10 shots of the dense plasma focus argon ion beam irradiation reduced the hydrogen content resulting in a decrease in crystallinity and structural order in the film structure.
format Article
author Ngoi, S.K.
Yap, S.L.
Goh, B.T.
Ritikos, R.
Rahman, S.A.
Wong, C.S.
author_facet Ngoi, S.K.
Yap, S.L.
Goh, B.T.
Ritikos, R.
Rahman, S.A.
Wong, C.S.
author_sort Ngoi, S.K.
title Formation of nano-crystalline phase in hydrogenated amorphous silicon thin film by plasma focus ion beam irradiation
title_short Formation of nano-crystalline phase in hydrogenated amorphous silicon thin film by plasma focus ion beam irradiation
title_full Formation of nano-crystalline phase in hydrogenated amorphous silicon thin film by plasma focus ion beam irradiation
title_fullStr Formation of nano-crystalline phase in hydrogenated amorphous silicon thin film by plasma focus ion beam irradiation
title_full_unstemmed Formation of nano-crystalline phase in hydrogenated amorphous silicon thin film by plasma focus ion beam irradiation
title_sort formation of nano-crystalline phase in hydrogenated amorphous silicon thin film by plasma focus ion beam irradiation
publishDate 2012
url http://eprints.um.edu.my/7354/
_version_ 1643688023013982208
score 13.211869

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