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Effect of substrate to filament distance on formation and photoluminescence properties of indium catalyzed silicon nanowires using hot-wire chemical vapor deposition

Si nanowires have been synthesized by hot-wire chemical vapor deposition technique, with Indium nanocones employed as catalysts with different substrate to filament distances ranging from 6 to 3 cm. Reducing the substrate to filament distance resulted in the retention of more atomic H radicals on th...

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Main Authors: Chong, Su Kong, Goh, Boon Tong, Dee, Chang Fu, Rahman, Saadah Abdul
Format: Article
Published: 2013
Subjects:
QC Physics
Online Access:http://eprints.um.edu.my/7343/
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spelling my.um.eprints.73432013-07-15T06:32:18Z http://eprints.um.edu.my/7343/ Effect of substrate to filament distance on formation and photoluminescence properties of indium catalyzed silicon nanowires using hot-wire chemical vapor deposition Chong, Su Kong Goh, Boon Tong Dee, Chang Fu Rahman, Saadah Abdul QC Physics Si nanowires have been synthesized by hot-wire chemical vapor deposition technique, with Indium nanocones employed as catalysts with different substrate to filament distances ranging from 6 to 3 cm. Reducing the substrate to filament distance resulted in the retention of more atomic H radicals on the growth sites. The atomic H radicals acted to induce the catalytic growth and enhance the crystallinity of the Si nanowires. The Si nanowires showed tapering structures due to the radial growth of columnar Si nanocrystallites on the middle and base walls of the nanowires. The oxide-related defects on the outer layer of the Indium nanocones and Si nanowires, as well as the Si nanocrystallites on walls of the Si nanowires, contributed to the visible orange and red photoluminescence. 2013 Article PeerReviewed Chong, Su Kong and Goh, Boon Tong and Dee, Chang Fu and Rahman, Saadah Abdul (2013) Effect of substrate to filament distance on formation and photoluminescence properties of indium catalyzed silicon nanowires using hot-wire chemical vapor deposition. Thin Solid Films, 529. pp. 153-158. ISSN 0040-6090 10.1016/j.tsf.2012.07.098
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic QC Physics
spellingShingle QC Physics
Chong, Su Kong
Goh, Boon Tong
Dee, Chang Fu
Rahman, Saadah Abdul
Effect of substrate to filament distance on formation and photoluminescence properties of indium catalyzed silicon nanowires using hot-wire chemical vapor deposition
description Si nanowires have been synthesized by hot-wire chemical vapor deposition technique, with Indium nanocones employed as catalysts with different substrate to filament distances ranging from 6 to 3 cm. Reducing the substrate to filament distance resulted in the retention of more atomic H radicals on the growth sites. The atomic H radicals acted to induce the catalytic growth and enhance the crystallinity of the Si nanowires. The Si nanowires showed tapering structures due to the radial growth of columnar Si nanocrystallites on the middle and base walls of the nanowires. The oxide-related defects on the outer layer of the Indium nanocones and Si nanowires, as well as the Si nanocrystallites on walls of the Si nanowires, contributed to the visible orange and red photoluminescence.
format Article
author Chong, Su Kong
Goh, Boon Tong
Dee, Chang Fu
Rahman, Saadah Abdul
author_facet Chong, Su Kong
Goh, Boon Tong
Dee, Chang Fu
Rahman, Saadah Abdul
author_sort Chong, Su Kong
title Effect of substrate to filament distance on formation and photoluminescence properties of indium catalyzed silicon nanowires using hot-wire chemical vapor deposition
title_short Effect of substrate to filament distance on formation and photoluminescence properties of indium catalyzed silicon nanowires using hot-wire chemical vapor deposition
title_full Effect of substrate to filament distance on formation and photoluminescence properties of indium catalyzed silicon nanowires using hot-wire chemical vapor deposition
title_fullStr Effect of substrate to filament distance on formation and photoluminescence properties of indium catalyzed silicon nanowires using hot-wire chemical vapor deposition
title_full_unstemmed Effect of substrate to filament distance on formation and photoluminescence properties of indium catalyzed silicon nanowires using hot-wire chemical vapor deposition
title_sort effect of substrate to filament distance on formation and photoluminescence properties of indium catalyzed silicon nanowires using hot-wire chemical vapor deposition
publishDate 2013
url http://eprints.um.edu.my/7343/
_version_ 1643688020382056448
score 13.211869

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