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Modulating oxygen vacancy of ZnO for visible-light driven photocatalytic H2 evolution via facile gas treatment approach

Photocatalytic hydrogen production through water splitting is one of the most promising approaches for sustainable and renewable energy source. In recent years, research on defect rich metal oxide semiconductors has increased tremendously. N-type semiconductor ZnO exhibits a wide direct band gap of...

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Main Authors: Goh, Jin He, Tan, Kar Woon, Liow, Jo Ey, Khiew, Poi Sim, Chiu, Wee Siong, Haw, Choon Yian
Format: Article
Published: Elsevier 2024
Subjects:
QD Chemistry
TP Chemical technology
Online Access:http://eprints.um.edu.my/45110/
https://doi.org/10.1016/j.mssp.2024.108445
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spelling my.um.eprints.451102024-09-17T03:43:41Z http://eprints.um.edu.my/45110/ Modulating oxygen vacancy of ZnO for visible-light driven photocatalytic H2 evolution via facile gas treatment approach Goh, Jin He Tan, Kar Woon Liow, Jo Ey Khiew, Poi Sim Chiu, Wee Siong Haw, Choon Yian QD Chemistry TP Chemical technology Photocatalytic hydrogen production through water splitting is one of the most promising approaches for sustainable and renewable energy source. In recent years, research on defect rich metal oxide semiconductors has increased tremendously. N-type semiconductor ZnO exhibits a wide direct band gap of 3.3eV, limiting the optical absorption at UV range, hindering the photocatalytic performance of pristine ZnO. Furthermore, short charge carriers life time can also decrease the efficiency for hydrogen evolution. In this report, crystal defect engineering via oxygen vacancy tailoring was conducted, narrowing the bandgap of ZnO, while creating interstitial defects that reduces the recombination rate of electrons and holes. ZnO was synthesized via hydrothermal method using zinc acetate dihydrate and sodium hydroxide as precursors before subjecting for conditional annealing for 30, 60, 90 and 120 min for 200 degrees C, 300 degrees C, 400 degrees C and 500 degrees C. A series of characterization techniques were used to authenticate the effects of oxygen vacancy in ZnO. Experimental studies revealed that ZnO annealed at 400 degrees C for 120 min exhibit the highest amount of hydrogen produced through photochemical reactions. Therefore, the degree of oxygen vacancies in ZnO semiconductor can be regulated through diligent control of annealing parameters. Specifically, finding the optimum annealing temperature and duration were the focus in this study that relates to its photocatalytic hydrogen evolution rate. Elsevier 2024-08 Article PeerReviewed Goh, Jin He and Tan, Kar Woon and Liow, Jo Ey and Khiew, Poi Sim and Chiu, Wee Siong and Haw, Choon Yian (2024) Modulating oxygen vacancy of ZnO for visible-light driven photocatalytic H2 evolution via facile gas treatment approach. Materials Science in Semiconductor Processing, 178. p. 108445. ISSN 1369-8001, DOI https://doi.org/10.1016/j.mssp.2024.108445 <https://doi.org/10.1016/j.mssp.2024.108445>. https://doi.org/10.1016/j.mssp.2024.108445 10.1016/j.mssp.2024.108445
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic QD Chemistry
TP Chemical technology
spellingShingle QD Chemistry
TP Chemical technology
Goh, Jin He
Tan, Kar Woon
Liow, Jo Ey
Khiew, Poi Sim
Chiu, Wee Siong
Haw, Choon Yian
Modulating oxygen vacancy of ZnO for visible-light driven photocatalytic H2 evolution via facile gas treatment approach
description Photocatalytic hydrogen production through water splitting is one of the most promising approaches for sustainable and renewable energy source. In recent years, research on defect rich metal oxide semiconductors has increased tremendously. N-type semiconductor ZnO exhibits a wide direct band gap of 3.3eV, limiting the optical absorption at UV range, hindering the photocatalytic performance of pristine ZnO. Furthermore, short charge carriers life time can also decrease the efficiency for hydrogen evolution. In this report, crystal defect engineering via oxygen vacancy tailoring was conducted, narrowing the bandgap of ZnO, while creating interstitial defects that reduces the recombination rate of electrons and holes. ZnO was synthesized via hydrothermal method using zinc acetate dihydrate and sodium hydroxide as precursors before subjecting for conditional annealing for 30, 60, 90 and 120 min for 200 degrees C, 300 degrees C, 400 degrees C and 500 degrees C. A series of characterization techniques were used to authenticate the effects of oxygen vacancy in ZnO. Experimental studies revealed that ZnO annealed at 400 degrees C for 120 min exhibit the highest amount of hydrogen produced through photochemical reactions. Therefore, the degree of oxygen vacancies in ZnO semiconductor can be regulated through diligent control of annealing parameters. Specifically, finding the optimum annealing temperature and duration were the focus in this study that relates to its photocatalytic hydrogen evolution rate.
format Article
author Goh, Jin He
Tan, Kar Woon
Liow, Jo Ey
Khiew, Poi Sim
Chiu, Wee Siong
Haw, Choon Yian
author_facet Goh, Jin He
Tan, Kar Woon
Liow, Jo Ey
Khiew, Poi Sim
Chiu, Wee Siong
Haw, Choon Yian
author_sort Goh, Jin He
title Modulating oxygen vacancy of ZnO for visible-light driven photocatalytic H2 evolution via facile gas treatment approach
title_short Modulating oxygen vacancy of ZnO for visible-light driven photocatalytic H2 evolution via facile gas treatment approach
title_full Modulating oxygen vacancy of ZnO for visible-light driven photocatalytic H2 evolution via facile gas treatment approach
title_fullStr Modulating oxygen vacancy of ZnO for visible-light driven photocatalytic H2 evolution via facile gas treatment approach
title_full_unstemmed Modulating oxygen vacancy of ZnO for visible-light driven photocatalytic H2 evolution via facile gas treatment approach
title_sort modulating oxygen vacancy of zno for visible-light driven photocatalytic h2 evolution via facile gas treatment approach
publisher Elsevier
publishDate 2024
url http://eprints.um.edu.my/45110/
https://doi.org/10.1016/j.mssp.2024.108445
_version_ 1811682088015888384
score 13.244414

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