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Adaptive impedance matching in microwave and terahertz metamaterial absorbers using PIN diodes and GaN HEMTs

Metamaterial absorbers allow electromagnetic waves to be converted into heat energy based on impedance matching. However, passive metamaterial absorbers exhibit fixed absorption characteristics, limiting their flexibility. This work demonstrates tunable microwave and terahertz absorbers by integrati...

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Main Authors:	Liu, Yunpeng, Ibrahim, Suriani, Majid, Nazia Abdul, Mohd Sabri, Mohd Faizul, Sun, Jianwen, Zhuo, Qiming, Liu, Wei
Format:	Article
Published:	Institute of Physics 2024
Subjects:	QC Physics TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.um.edu.my/45104/ https://doi.org/10.1088/1361-6463/ad4565
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id	my.um.eprints.45104
record_format	eprints
spelling	my.um.eprints.451042024-09-17T03:04:59Z http://eprints.um.edu.my/45104/ Adaptive impedance matching in microwave and terahertz metamaterial absorbers using PIN diodes and GaN HEMTs Liu, Yunpeng Ibrahim, Suriani Majid, Nazia Abdul Mohd Sabri, Mohd Faizul Sun, Jianwen Zhuo, Qiming Liu, Wei QC Physics TK Electrical engineering. Electronics Nuclear engineering Metamaterial absorbers allow electromagnetic waves to be converted into heat energy based on impedance matching. However, passive metamaterial absorbers exhibit fixed absorption characteristics, limiting their flexibility. This work demonstrates tunable microwave and terahertz absorbers by integrating adjustable resistors into the metamaterial units. First, a microwave absorber from 1 to 5 GHz was designed by embedding PIN diodes with voltage-controlled resistance. Calculations, simulations, and measurements verified two separate absorption peaks over 90% when optimized to a resistance of 250 Omega. The absorption frequencies shifted based on the resistor tuning. Building on this, a terahertz absorber was modeled by substituting gallium nitride high electron mobility transistors (GaN HEMTs) as the adjustable resistor component. The GaN HEMTs were controlled by an integrated gate electrode to modify the two-dimensional electron gas density, allowing resistance changes without external voltage terminals. Simulations revealed two absorption peaks exceeding 90% absorption at 0.34 THz and 1.06 THz by adjusting the equivalent resistance from 180 Omega to 380 Omega, and the tunable resistance is verified by DC measurement of single GaN HEMT in the unit. This work demonstrates how integrating adjustable resistors enables dynamic control over the absorption frequencies and bandwidths of metamaterial absorbers. The proposed geometries provide blueprints for tunable microwave and terahertz absorbers. Institute of Physics 2024-08 Article PeerReviewed Liu, Yunpeng and Ibrahim, Suriani and Majid, Nazia Abdul and Mohd Sabri, Mohd Faizul and Sun, Jianwen and Zhuo, Qiming and Liu, Wei (2024) Adaptive impedance matching in microwave and terahertz metamaterial absorbers using PIN diodes and GaN HEMTs. Journal of Physics D: Applied Physics, 57 (31). p. 315101. ISSN 0022-3727, DOI https://doi.org/10.1088/1361-6463/ad4565 <https://doi.org/10.1088/1361-6463/ad4565>. https://doi.org/10.1088/1361-6463/ad4565 10.1088/1361-6463/ad4565
institution	Universiti Malaya
building	UM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Malaya
content_source	UM Research Repository
url_provider	http://eprints.um.edu.my/
topic	QC Physics TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	QC Physics TK Electrical engineering. Electronics Nuclear engineering Liu, Yunpeng Ibrahim, Suriani Majid, Nazia Abdul Mohd Sabri, Mohd Faizul Sun, Jianwen Zhuo, Qiming Liu, Wei Adaptive impedance matching in microwave and terahertz metamaterial absorbers using PIN diodes and GaN HEMTs
description	Metamaterial absorbers allow electromagnetic waves to be converted into heat energy based on impedance matching. However, passive metamaterial absorbers exhibit fixed absorption characteristics, limiting their flexibility. This work demonstrates tunable microwave and terahertz absorbers by integrating adjustable resistors into the metamaterial units. First, a microwave absorber from 1 to 5 GHz was designed by embedding PIN diodes with voltage-controlled resistance. Calculations, simulations, and measurements verified two separate absorption peaks over 90% when optimized to a resistance of 250 Omega. The absorption frequencies shifted based on the resistor tuning. Building on this, a terahertz absorber was modeled by substituting gallium nitride high electron mobility transistors (GaN HEMTs) as the adjustable resistor component. The GaN HEMTs were controlled by an integrated gate electrode to modify the two-dimensional electron gas density, allowing resistance changes without external voltage terminals. Simulations revealed two absorption peaks exceeding 90% absorption at 0.34 THz and 1.06 THz by adjusting the equivalent resistance from 180 Omega to 380 Omega, and the tunable resistance is verified by DC measurement of single GaN HEMT in the unit. This work demonstrates how integrating adjustable resistors enables dynamic control over the absorption frequencies and bandwidths of metamaterial absorbers. The proposed geometries provide blueprints for tunable microwave and terahertz absorbers.
format	Article
author	Liu, Yunpeng Ibrahim, Suriani Majid, Nazia Abdul Mohd Sabri, Mohd Faizul Sun, Jianwen Zhuo, Qiming Liu, Wei
author_facet	Liu, Yunpeng Ibrahim, Suriani Majid, Nazia Abdul Mohd Sabri, Mohd Faizul Sun, Jianwen Zhuo, Qiming Liu, Wei
author_sort	Liu, Yunpeng
title	Adaptive impedance matching in microwave and terahertz metamaterial absorbers using PIN diodes and GaN HEMTs
title_short	Adaptive impedance matching in microwave and terahertz metamaterial absorbers using PIN diodes and GaN HEMTs
title_full	Adaptive impedance matching in microwave and terahertz metamaterial absorbers using PIN diodes and GaN HEMTs
title_fullStr	Adaptive impedance matching in microwave and terahertz metamaterial absorbers using PIN diodes and GaN HEMTs
title_full_unstemmed	Adaptive impedance matching in microwave and terahertz metamaterial absorbers using PIN diodes and GaN HEMTs
title_sort	adaptive impedance matching in microwave and terahertz metamaterial absorbers using pin diodes and gan hemts
publisher	Institute of Physics
publishDate	2024
url	http://eprints.um.edu.my/45104/ https://doi.org/10.1088/1361-6463/ad4565
_version_	1811682087128793088
score	13.211869

Adaptive impedance matching in microwave and terahertz metamaterial absorbers using PIN diodes and GaN HEMTs

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