Exploring the optoelectronic potential of M2SnX3F2 (M = Sr, Ba; X = S, Se) compounds through first-principles analysis of structural, electronic, and optical properties
In this study, the equilibrium ground-state, electronic structure, and optical properties of four chalcofluorides, M2SnX3F2 (M = Sr, Ba and X = S, Se) compounds have been reported using the density functional theory (DFT) based on the generalized gradient approximation (GGA-PBE) functional. The non-...
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my.um.eprints.450282024-03-25T07:29:41Z http://eprints.um.edu.my/45028/ Exploring the optoelectronic potential of M2SnX3F2 (M = Sr, Ba; X = S, Se) compounds through first-principles analysis of structural, electronic, and optical properties Smida, Youssef Ben Marzougui, Basma Driss, Mohamed Onwudiwe, Damian C. Al-Douri, Y. QD Chemistry TA Engineering (General). Civil engineering (General) In this study, the equilibrium ground-state, electronic structure, and optical properties of four chalcofluorides, M2SnX3F2 (M = Sr, Ba and X = S, Se) compounds have been reported using the density functional theory (DFT) based on the generalized gradient approximation (GGA-PBE) functional. The non-covalent interactions have been considered using the dispersion-corrected theory (DFT + D3). The electronic bond structures have shown that the studied compounds are direct semiconductors. Calculated optical band gaps obtained via the DFT + D method are very close to the experimental values. The investigation of the imaginary part of the dielectric function shows the presence of four electronic transitions. The refractive index of the chalcofluorides is decreased with an increase in the energy bandgap (Eg). An intense absorption occurred along the 010 direction, which reached a value of about 2 × 105 cm−1. The highest energy loss is observed along the 010 direction for Ba2SnSe3F2, which has the highest number of total electrons. © 2023, The Tunisian Chemical Society and Springer Nature Switzerland AG. Springer Science and Business Media Deutschland GmbH 2024 Article PeerReviewed Smida, Youssef Ben and Marzougui, Basma and Driss, Mohamed and Onwudiwe, Damian C. and Al-Douri, Y. (2024) Exploring the optoelectronic potential of M2SnX3F2 (M = Sr, Ba; X = S, Se) compounds through first-principles analysis of structural, electronic, and optical properties. Chemistry Africa, 7 (1). 491 – 503. ISSN 2522-5758, DOI https://doi.org/10.1007/s42250-023-00753-w <https://doi.org/10.1007/s42250-023-00753-w>. 10.1007/s42250-023-00753-w |
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QD Chemistry TA Engineering (General). Civil engineering (General) Smida, Youssef Ben Marzougui, Basma Driss, Mohamed Onwudiwe, Damian C. Al-Douri, Y. Exploring the optoelectronic potential of M2SnX3F2 (M = Sr, Ba; X = S, Se) compounds through first-principles analysis of structural, electronic, and optical properties |
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In this study, the equilibrium ground-state, electronic structure, and optical properties of four chalcofluorides, M2SnX3F2 (M = Sr, Ba and X = S, Se) compounds have been reported using the density functional theory (DFT) based on the generalized gradient approximation (GGA-PBE) functional. The non-covalent interactions have been considered using the dispersion-corrected theory (DFT + D3). The electronic bond structures have shown that the studied compounds are direct semiconductors. Calculated optical band gaps obtained via the DFT + D method are very close to the experimental values. The investigation of the imaginary part of the dielectric function shows the presence of four electronic transitions. The refractive index of the chalcofluorides is decreased with an increase in the energy bandgap (Eg). An intense absorption occurred along the 010 direction, which reached a value of about 2 × 105 cm−1. The highest energy loss is observed along the 010 direction for Ba2SnSe3F2, which has the highest number of total electrons. © 2023, The Tunisian Chemical Society and Springer Nature Switzerland AG. |
format |
Article |
author |
Smida, Youssef Ben Marzougui, Basma Driss, Mohamed Onwudiwe, Damian C. Al-Douri, Y. |
author_facet |
Smida, Youssef Ben Marzougui, Basma Driss, Mohamed Onwudiwe, Damian C. Al-Douri, Y. |
author_sort |
Smida, Youssef Ben |
title |
Exploring the optoelectronic potential of M2SnX3F2 (M = Sr, Ba; X = S, Se) compounds through first-principles analysis of structural, electronic, and optical properties |
title_short |
Exploring the optoelectronic potential of M2SnX3F2 (M = Sr, Ba; X = S, Se) compounds through first-principles analysis of structural, electronic, and optical properties |
title_full |
Exploring the optoelectronic potential of M2SnX3F2 (M = Sr, Ba; X = S, Se) compounds through first-principles analysis of structural, electronic, and optical properties |
title_fullStr |
Exploring the optoelectronic potential of M2SnX3F2 (M = Sr, Ba; X = S, Se) compounds through first-principles analysis of structural, electronic, and optical properties |
title_full_unstemmed |
Exploring the optoelectronic potential of M2SnX3F2 (M = Sr, Ba; X = S, Se) compounds through first-principles analysis of structural, electronic, and optical properties |
title_sort |
exploring the optoelectronic potential of m2snx3f2 (m = sr, ba; x = s, se) compounds through first-principles analysis of structural, electronic, and optical properties |
publisher |
Springer Science and Business Media Deutschland GmbH |
publishDate |
2024 |
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http://eprints.um.edu.my/45028/ |
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1794548697568116736 |
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13.251813 |