A 23.3 dBm CMOS power amplifier with third-order gm cancellation linearization technique achieving OIP3 of 34 dBm
Purpose The purpose of this paper is to implement a highly linear 180 nm complementary metal oxide semiconductor (CMOS) power amplifier (PA) to meet the stringent linearity requirement of an long term evolution (LTE) signal with minimum trade-off to power added efficiency (PAE). Design/methodology/a...
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| Main Authors: | , , , , |
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| Format: | Article |
| Published: |
2022
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/42465/ |
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