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Sulfurization engineering of single-zone CVD vertical and horizontal MoS2 on p-GaN heterostructures for self-powered UV photodetectors

Molybdenum disulfide (MoS2) has been attracting considerable attention due to its excellent electrical and optical properties. We successfully grew high-quality, large-area and uniform few-layer (FL)-MoS2 on p-doped gallium nitride (p-GaN) using a simplified sulfurization technique by the single-zon...

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Main Authors: Zulkifli, Nur `Adnin Akmar, Zahir, Nor Hilmi, Ripain, Atiena Husna Abdullah, Said, Suhana Mohd, Zakaria, Rozalina
Format: Article
Published: Royal Society of Chemistry 2023
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.um.edu.my/38850/
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spelling my.um.eprints.388502024-11-19T07:08:24Z http://eprints.um.edu.my/38850/ Sulfurization engineering of single-zone CVD vertical and horizontal MoS2 on p-GaN heterostructures for self-powered UV photodetectors Zulkifli, Nur `Adnin Akmar Zahir, Nor Hilmi Ripain, Atiena Husna Abdullah Said, Suhana Mohd Zakaria, Rozalina TK Electrical engineering. Electronics Nuclear engineering Molybdenum disulfide (MoS2) has been attracting considerable attention due to its excellent electrical and optical properties. We successfully grew high-quality, large-area and uniform few-layer (FL)-MoS2 on p-doped gallium nitride (p-GaN) using a simplified sulfurization technique by the single-zone CVD of a Mo seed layer via E-beam evaporation. Tuning the sulfurization parameters, namely temperature and duration, has been discovered to be an effective strategy for improving MoS2 orientation (horizontally aligned and vertically aligned) and quality, which affects photodetector (PD) performance. The increase in the sulfurization temperature to 850 degrees C results in improved structural quality and crystallite size. However, a prolonged sulfurization duration of 60 minutes caused the degradation of the film quality. The close lattice match between p-GaN and MoS2 contributes to the excellent quality growth of deposited MoS2. Following this, an n-MoS2/p-GaN heterostructure PD was successfully built by a MoS2 position-selectivity method. We report a highly sensitive and self-powered GaN/MoS2 p-n heterojunction PD with a relatively high responsivity of 14.3 A W-1, a high specific detectivity of 1.12 x 10(13) Jones, and a fast response speed of 8.3/13.4 mu s (20 kHz) under a UV light of 355 nm at zero-bias voltage. Our PD exhibits superior performance to that of the previously reported MoS2/GaN p-n PD. Our findings suggest a more efficient and straightforward approach to building high-performance self-powered UV PDs. Royal Society of Chemistry 2023-01 Article PeerReviewed Zulkifli, Nur `Adnin Akmar and Zahir, Nor Hilmi and Ripain, Atiena Husna Abdullah and Said, Suhana Mohd and Zakaria, Rozalina (2023) Sulfurization engineering of single-zone CVD vertical and horizontal MoS2 on p-GaN heterostructures for self-powered UV photodetectors. Nanoscale Advances, 5 (3). pp. 879-892. ISSN 2516-0230, DOI https://doi.org/10.1039/d2na00756h <https://doi.org/10.1039/d2na00756h>. 10.1039/d2na00756h
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Zulkifli, Nur `Adnin Akmar
Zahir, Nor Hilmi
Ripain, Atiena Husna Abdullah
Said, Suhana Mohd
Zakaria, Rozalina
Sulfurization engineering of single-zone CVD vertical and horizontal MoS2 on p-GaN heterostructures for self-powered UV photodetectors
description Molybdenum disulfide (MoS2) has been attracting considerable attention due to its excellent electrical and optical properties. We successfully grew high-quality, large-area and uniform few-layer (FL)-MoS2 on p-doped gallium nitride (p-GaN) using a simplified sulfurization technique by the single-zone CVD of a Mo seed layer via E-beam evaporation. Tuning the sulfurization parameters, namely temperature and duration, has been discovered to be an effective strategy for improving MoS2 orientation (horizontally aligned and vertically aligned) and quality, which affects photodetector (PD) performance. The increase in the sulfurization temperature to 850 degrees C results in improved structural quality and crystallite size. However, a prolonged sulfurization duration of 60 minutes caused the degradation of the film quality. The close lattice match between p-GaN and MoS2 contributes to the excellent quality growth of deposited MoS2. Following this, an n-MoS2/p-GaN heterostructure PD was successfully built by a MoS2 position-selectivity method. We report a highly sensitive and self-powered GaN/MoS2 p-n heterojunction PD with a relatively high responsivity of 14.3 A W-1, a high specific detectivity of 1.12 x 10(13) Jones, and a fast response speed of 8.3/13.4 mu s (20 kHz) under a UV light of 355 nm at zero-bias voltage. Our PD exhibits superior performance to that of the previously reported MoS2/GaN p-n PD. Our findings suggest a more efficient and straightforward approach to building high-performance self-powered UV PDs.
format Article
author Zulkifli, Nur `Adnin Akmar
Zahir, Nor Hilmi
Ripain, Atiena Husna Abdullah
Said, Suhana Mohd
Zakaria, Rozalina
author_facet Zulkifli, Nur `Adnin Akmar
Zahir, Nor Hilmi
Ripain, Atiena Husna Abdullah
Said, Suhana Mohd
Zakaria, Rozalina
author_sort Zulkifli, Nur `Adnin Akmar
title Sulfurization engineering of single-zone CVD vertical and horizontal MoS2 on p-GaN heterostructures for self-powered UV photodetectors
title_short Sulfurization engineering of single-zone CVD vertical and horizontal MoS2 on p-GaN heterostructures for self-powered UV photodetectors
title_full Sulfurization engineering of single-zone CVD vertical and horizontal MoS2 on p-GaN heterostructures for self-powered UV photodetectors
title_fullStr Sulfurization engineering of single-zone CVD vertical and horizontal MoS2 on p-GaN heterostructures for self-powered UV photodetectors
title_full_unstemmed Sulfurization engineering of single-zone CVD vertical and horizontal MoS2 on p-GaN heterostructures for self-powered UV photodetectors
title_sort sulfurization engineering of single-zone cvd vertical and horizontal mos2 on p-gan heterostructures for self-powered uv photodetectors
publisher Royal Society of Chemistry
publishDate 2023
url http://eprints.um.edu.my/38850/
_version_ 1817841939415826432
score 13.223943

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