Agglomeration enhancement of AlN surface diffusion fluxes on a (0001)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD
An atomically flat covering with a dense and crack-free surface of aluminium nitride films was successfully deposited on a sapphire-(0 0 0 1) substrate through a pulsed atomic-layer epitaxy technique via horizontal metalorganic chemical vapour deposition. The distribution of surface diffusion energy...
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Main Authors: | , , , , , , , , , |
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Format: | Article |
Published: |
Royal Society of Chemistry
2020
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Online Access: | http://eprints.um.edu.my/36683/ |
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