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Modeling and optimization of ISFET microsensor for the use of quality testing in food and pharmaceutical industry

Ion-sensitive field-effect transistor (ISFET) is one of the most promising chemical sensors that has many advantages such as high integration capability, low cost, simple interface, and high productivity. ISFET has the capability to detect various molecules such as enzymes, antibodies and proteins,...

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Main Authors: Yeo, Tiong Chia, Wan Muhammad Hatta, Sharifah Fatmadiana, Soin, Norhayati, Abu Bakar Sajak, Aznida
Format: Conference or Workshop Item
Published: 2021
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.um.edu.my/35745/
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85115072770&doi=10.1109%2fRSM52397.2021.9511588&partnerID=40&md5=9b30a9acfe06f4bb519e2556e2c0973b
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spelling my.um.eprints.357452023-11-08T10:44:37Z http://eprints.um.edu.my/35745/ Modeling and optimization of ISFET microsensor for the use of quality testing in food and pharmaceutical industry Yeo, Tiong Chia Wan Muhammad Hatta, Sharifah Fatmadiana Soin, Norhayati Abu Bakar Sajak, Aznida TK Electrical engineering. Electronics Nuclear engineering Ion-sensitive field-effect transistor (ISFET) is one of the most promising chemical sensors that has many advantages such as high integration capability, low cost, simple interface, and high productivity. ISFET has the capability to detect various molecules such as enzymes, antibodies and proteins, but pH sensing is mainly discussed in this paper. An ISFET model is developed using the TCAD tool - COMSOL Multiphysics 5.5 to study the characteristics of the ISFET as a pH sensor. The model also used to investigate the effects of gate insulator materials, other geometry consideration and operating condition on ISFET performance. The Id-Vg characteristics, threshold voltage, electric potential, and sensitivity of the ISFET were analysed. The simulated results were verified against approximated values calculated using the surface potential equation. It was observed that the tantalum pentoxide, Ta2O5 dielectric material has the highest sensitivity, which is very near to the calculated Nernst limit and thinner oxide layer can result in smaller threshold voltage which may lead to lower the power consumption. © 2021 IEEE. 2021-08 Conference or Workshop Item PeerReviewed Yeo, Tiong Chia and Wan Muhammad Hatta, Sharifah Fatmadiana and Soin, Norhayati and Abu Bakar Sajak, Aznida (2021) Modeling and optimization of ISFET microsensor for the use of quality testing in food and pharmaceutical industry. In: 13th IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2021, 2 - 4 August 2021, Virtual, Kuala Lumpur. https://www.scopus.com/inward/record.uri?eid=2-s2.0-85115072770&doi=10.1109%2fRSM52397.2021.9511588&partnerID=40&md5=9b30a9acfe06f4bb519e2556e2c0973b
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Yeo, Tiong Chia
Wan Muhammad Hatta, Sharifah Fatmadiana
Soin, Norhayati
Abu Bakar Sajak, Aznida
Modeling and optimization of ISFET microsensor for the use of quality testing in food and pharmaceutical industry
description Ion-sensitive field-effect transistor (ISFET) is one of the most promising chemical sensors that has many advantages such as high integration capability, low cost, simple interface, and high productivity. ISFET has the capability to detect various molecules such as enzymes, antibodies and proteins, but pH sensing is mainly discussed in this paper. An ISFET model is developed using the TCAD tool - COMSOL Multiphysics 5.5 to study the characteristics of the ISFET as a pH sensor. The model also used to investigate the effects of gate insulator materials, other geometry consideration and operating condition on ISFET performance. The Id-Vg characteristics, threshold voltage, electric potential, and sensitivity of the ISFET were analysed. The simulated results were verified against approximated values calculated using the surface potential equation. It was observed that the tantalum pentoxide, Ta2O5 dielectric material has the highest sensitivity, which is very near to the calculated Nernst limit and thinner oxide layer can result in smaller threshold voltage which may lead to lower the power consumption. © 2021 IEEE.
format Conference or Workshop Item
author Yeo, Tiong Chia
Wan Muhammad Hatta, Sharifah Fatmadiana
Soin, Norhayati
Abu Bakar Sajak, Aznida
author_facet Yeo, Tiong Chia
Wan Muhammad Hatta, Sharifah Fatmadiana
Soin, Norhayati
Abu Bakar Sajak, Aznida
author_sort Yeo, Tiong Chia
title Modeling and optimization of ISFET microsensor for the use of quality testing in food and pharmaceutical industry
title_short Modeling and optimization of ISFET microsensor for the use of quality testing in food and pharmaceutical industry
title_full Modeling and optimization of ISFET microsensor for the use of quality testing in food and pharmaceutical industry
title_fullStr Modeling and optimization of ISFET microsensor for the use of quality testing in food and pharmaceutical industry
title_full_unstemmed Modeling and optimization of ISFET microsensor for the use of quality testing in food and pharmaceutical industry
title_sort modeling and optimization of isfet microsensor for the use of quality testing in food and pharmaceutical industry
publishDate 2021
url http://eprints.um.edu.my/35745/
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85115072770&doi=10.1109%2fRSM52397.2021.9511588&partnerID=40&md5=9b30a9acfe06f4bb519e2556e2c0973b
_version_ 1783876631877648384
score 13.211869

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