Electronics and magnetic properties of p-block elements doped 2D buckled gallium nitride MGaN (M = Al, Si, P and S): A first-principles study
Ab initio calculations within the density-functional theory (DFT) are carried out to investigate the electronics and magnetic properties of the p-block elements doped two-dimensional GaN (2D GaN). We have selected Al, Si, P and S dopants as the representative for Group III, IV, V and VI elements, re...
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| 主要な著者: | , , , , |
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| フォーマット: | Conference or Workshop Item |
| 出版事項: |
2021
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| 主題: | |
| オンライン･アクセス: | http://eprints.um.edu.my/35425/ |
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