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Electronics and magnetic properties of p-block elements doped 2D buckled gallium nitride MGaN (M = Al, Si, P and S): A first-principles study

Ab initio calculations within the density-functional theory (DFT) are carried out to investigate the electronics and magnetic properties of the p-block elements doped two-dimensional GaN (2D GaN). We have selected Al, Si, P and S dopants as the representative for Group III, IV, V and VI elements, re...

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Main Authors: Yeoh, Keat Hoe, Chew, Khian-Hooi, Yoon, Tiem Leong, Ong, Duu Sheng, Rusi, -
Format: Conference or Workshop Item
Published: 2021
Subjects:
QC Physics
Online Access:http://eprints.um.edu.my/35425/
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spelling my.um.eprints.354252023-10-12T10:19:58Z http://eprints.um.edu.my/35425/ Electronics and magnetic properties of p-block elements doped 2D buckled gallium nitride MGaN (M = Al, Si, P and S): A first-principles study Yeoh, Keat Hoe Chew, Khian-Hooi Yoon, Tiem Leong Ong, Duu Sheng Rusi, - QC Physics Ab initio calculations within the density-functional theory (DFT) are carried out to investigate the electronics and magnetic properties of the p-block elements doped two-dimensional GaN (2D GaN). We have selected Al, Si, P and S dopants as the representative for Group III, IV, V and VI elements, respectively. Depending on the type of dopant and substitution site, the semiconducting characteristic of the 2D GaN can be changed into metallic. Similarly, magnetism can be induced on the 2D GaN with the total magnetization varied from 0.5 mu B to 1.46 mu B. 2021-02 Conference or Workshop Item PeerReviewed Yeoh, Keat Hoe and Chew, Khian-Hooi and Yoon, Tiem Leong and Ong, Duu Sheng and Rusi, - (2021) Electronics and magnetic properties of p-block elements doped 2D buckled gallium nitride MGaN (M = Al, Si, P and S): A first-principles study. In: 4th International Sciences, Technology and Engineering Conference: Exploring Materials for the Future, ISTEC 2020, 8 October 2020, Arau, Virtual.
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic QC Physics
spellingShingle QC Physics
Yeoh, Keat Hoe
Chew, Khian-Hooi
Yoon, Tiem Leong
Ong, Duu Sheng
Rusi, -
Electronics and magnetic properties of p-block elements doped 2D buckled gallium nitride MGaN (M = Al, Si, P and S): A first-principles study
description Ab initio calculations within the density-functional theory (DFT) are carried out to investigate the electronics and magnetic properties of the p-block elements doped two-dimensional GaN (2D GaN). We have selected Al, Si, P and S dopants as the representative for Group III, IV, V and VI elements, respectively. Depending on the type of dopant and substitution site, the semiconducting characteristic of the 2D GaN can be changed into metallic. Similarly, magnetism can be induced on the 2D GaN with the total magnetization varied from 0.5 mu B to 1.46 mu B.
format Conference or Workshop Item
author Yeoh, Keat Hoe
Chew, Khian-Hooi
Yoon, Tiem Leong
Ong, Duu Sheng
Rusi, -
author_facet Yeoh, Keat Hoe
Chew, Khian-Hooi
Yoon, Tiem Leong
Ong, Duu Sheng
Rusi, -
author_sort Yeoh, Keat Hoe
title Electronics and magnetic properties of p-block elements doped 2D buckled gallium nitride MGaN (M = Al, Si, P and S): A first-principles study
title_short Electronics and magnetic properties of p-block elements doped 2D buckled gallium nitride MGaN (M = Al, Si, P and S): A first-principles study
title_full Electronics and magnetic properties of p-block elements doped 2D buckled gallium nitride MGaN (M = Al, Si, P and S): A first-principles study
title_fullStr Electronics and magnetic properties of p-block elements doped 2D buckled gallium nitride MGaN (M = Al, Si, P and S): A first-principles study
title_full_unstemmed Electronics and magnetic properties of p-block elements doped 2D buckled gallium nitride MGaN (M = Al, Si, P and S): A first-principles study
title_sort electronics and magnetic properties of p-block elements doped 2d buckled gallium nitride mgan (m = al, si, p and s): a first-principles study
publishDate 2021
url http://eprints.um.edu.my/35425/
_version_ 1781704466612879360
score 13.211869

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