Dispersion-engineered silicon nitride waveguides for mid-infrared supercontinuum generation covering the wavelength range 0.8–6.5 μm

We numerically demonstrate the generation of a mid-infrared supercontinuum (SC) through the design of an on-chip complementary metal oxide semiconductor compatible 10 mm-long air-clad rectangular waveguide made using stoichiometric silicon nitride (Si3N4) as the core and MgF2 glass as the lower clad...

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Main Authors: Ahmad, Harith, Karim, Mohammad Rezaul, Rahman, B.M. Azizur
Format: Article
Published: IOP Publishing 2019
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Online Access:http://eprints.um.edu.my/24345/
https://doi.org/10.1088/1555-6611/aaf63d
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spelling my.um.eprints.243452020-05-19T03:00:26Z http://eprints.um.edu.my/24345/ Dispersion-engineered silicon nitride waveguides for mid-infrared supercontinuum generation covering the wavelength range 0.8–6.5 μm Ahmad, Harith Karim, Mohammad Rezaul Rahman, B.M. Azizur QC Physics We numerically demonstrate the generation of a mid-infrared supercontinuum (SC) through the design of an on-chip complementary metal oxide semiconductor compatible 10 mm-long air-clad rectangular waveguide made using stoichiometric silicon nitride (Si3N4) as the core and MgF2 glass as the lower cladding. The proposed waveguide is designed for pumping in both the anomalous and all-normal dispersion regimes. A number of waveguide geometries are tailored for pumping at 1.55 μm with ultrashort pulses of 50 fs duration and a peak power of 5 kW. By initially keeping the thickness constant at 0.8 μm, four different structures are engineered with varying widths between 3 μm and 6 μm. The largest SC spectral evolution covering a region of 0.8 μm to beyond 6.5 m could be realized by a waveguide geometry with a width of 3 μm. Numerical analysis shows that increasing width beyond 3 μm while keeping thickness constant at 0.8 μm results in a reduction of the SC extension in the long wavelength side. However, the SC spectrum can be enhanced beyond 6.5 μm by increasing the waveguide thickness beyond 0.9 μm with the same peak power and pump source. To the best of our knowledge, this is the first report of a broad SC spectral evolution through numerical demonstration in the mid-infrared region by the Si3N4 waveguide. In the case of all-normal dispersion pumping, a flatter SC spectra can be predicted with the same peak power and pump pulse but with a reduced bandwidth spanning 950-2100 nm. © 2019 Astro Ltd. IOP Publishing 2019 Article PeerReviewed Ahmad, Harith and Karim, Mohammad Rezaul and Rahman, B.M. Azizur (2019) Dispersion-engineered silicon nitride waveguides for mid-infrared supercontinuum generation covering the wavelength range 0.8–6.5 μm. Laser Physics, 29 (2). 025301. ISSN 1054-660X https://doi.org/10.1088/1555-6611/aaf63d doi:10.1088/1555-6611/aaf63d
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic QC Physics
spellingShingle QC Physics
Ahmad, Harith
Karim, Mohammad Rezaul
Rahman, B.M. Azizur
Dispersion-engineered silicon nitride waveguides for mid-infrared supercontinuum generation covering the wavelength range 0.8–6.5 μm
description We numerically demonstrate the generation of a mid-infrared supercontinuum (SC) through the design of an on-chip complementary metal oxide semiconductor compatible 10 mm-long air-clad rectangular waveguide made using stoichiometric silicon nitride (Si3N4) as the core and MgF2 glass as the lower cladding. The proposed waveguide is designed for pumping in both the anomalous and all-normal dispersion regimes. A number of waveguide geometries are tailored for pumping at 1.55 μm with ultrashort pulses of 50 fs duration and a peak power of 5 kW. By initially keeping the thickness constant at 0.8 μm, four different structures are engineered with varying widths between 3 μm and 6 μm. The largest SC spectral evolution covering a region of 0.8 μm to beyond 6.5 m could be realized by a waveguide geometry with a width of 3 μm. Numerical analysis shows that increasing width beyond 3 μm while keeping thickness constant at 0.8 μm results in a reduction of the SC extension in the long wavelength side. However, the SC spectrum can be enhanced beyond 6.5 μm by increasing the waveguide thickness beyond 0.9 μm with the same peak power and pump source. To the best of our knowledge, this is the first report of a broad SC spectral evolution through numerical demonstration in the mid-infrared region by the Si3N4 waveguide. In the case of all-normal dispersion pumping, a flatter SC spectra can be predicted with the same peak power and pump pulse but with a reduced bandwidth spanning 950-2100 nm. © 2019 Astro Ltd.
format Article
author Ahmad, Harith
Karim, Mohammad Rezaul
Rahman, B.M. Azizur
author_facet Ahmad, Harith
Karim, Mohammad Rezaul
Rahman, B.M. Azizur
author_sort Ahmad, Harith
title Dispersion-engineered silicon nitride waveguides for mid-infrared supercontinuum generation covering the wavelength range 0.8–6.5 μm
title_short Dispersion-engineered silicon nitride waveguides for mid-infrared supercontinuum generation covering the wavelength range 0.8–6.5 μm
title_full Dispersion-engineered silicon nitride waveguides for mid-infrared supercontinuum generation covering the wavelength range 0.8–6.5 μm
title_fullStr Dispersion-engineered silicon nitride waveguides for mid-infrared supercontinuum generation covering the wavelength range 0.8–6.5 μm
title_full_unstemmed Dispersion-engineered silicon nitride waveguides for mid-infrared supercontinuum generation covering the wavelength range 0.8–6.5 μm
title_sort dispersion-engineered silicon nitride waveguides for mid-infrared supercontinuum generation covering the wavelength range 0.8–6.5 μm
publisher IOP Publishing
publishDate 2019
url http://eprints.um.edu.my/24345/
https://doi.org/10.1088/1555-6611/aaf63d
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score 13.211869