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Tailoring electronics structure, electrical and magnetic properties of synthesized transition metal (Ni)-doped ZnO thin film

Improving Zinc Oxide (ZnO) conductivity is in dire need due to its major shortcoming of high resistivity as a result of low carrier concentration. In this work, ZnO was doped with a transition metal, Nickel (Ni) in different concentrations (1 mol%, 2 mol%, 3 mol%, and 4 mol%) and the influence of Ni...

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Main Authors:	Basri, Siti Hajar, Abd Majid, Wan Haliza, Talik, Noor Azrina, Sarjidan, Mohd Arif Mohd
Format:	Article
Published:	Elsevier 2018
Subjects:	Q Science (General) QC Physics
Online Access:	http://eprints.um.edu.my/22337/ https://doi.org/10.1016/j.jallcom.2018.08.056
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spelling	my.um.eprints.223372019-09-13T06:24:57Z http://eprints.um.edu.my/22337/ Tailoring electronics structure, electrical and magnetic properties of synthesized transition metal (Ni)-doped ZnO thin film Basri, Siti Hajar Abd Majid, Wan Haliza Talik, Noor Azrina Sarjidan, Mohd Arif Mohd Q Science (General) QC Physics Improving Zinc Oxide (ZnO) conductivity is in dire need due to its major shortcoming of high resistivity as a result of low carrier concentration. In this work, ZnO was doped with a transition metal, Nickel (Ni) in different concentrations (1 mol%, 2 mol%, 3 mol%, and 4 mol%) and the influence of Ni concentrations in ZnO thin film in term of electrical, electronic structure as well as magnetic properties were investigated. ZnO thin films with Ni-doping were successfully produced via a sol-gel spin coating method. High-Resolution Transmission Electron Microscopy (HR-TEM) image observed for 3 mol% Ni:ZnO thin film shows clear and coherent lattice fringes in hexagonal shape with the amorphous structure inside. The resistivity of Ni:ZnO films show to decrease with the addition of Ni-doping down to 1.7 × 10−1 Ω cm, whilst the conductivity and the carrier concentration improved from 0.28 Sm-1 to 5.87 Sm-1 and 2.23 × 1014 cm−3 to 485.14 × 1014 cm−3 respectively. Thermal dependence activation energy (Ea) of ZnO thin film is found to be 1.3 eV and increases up to 15.1 eV above 373 K. X-ray Photoemission Spectroscopy/Ultraviolet Photoemission Spectroscopy (XPS/UPS) spectra indicate that Ni-doped ZnO induced more surface defects and native defects in the ZnO system. In addition to that, photoluminescence spectra show that Vo and Zni induced shallow donor in the system. Finally, via Vibrating Sample Magnetometery (VSM) measurement, it is revealed that the ferromagnetism of Ni:ZnO might be induced by the co-existence of Vo and Zni defects. These results may open an attractive path to tailor Ni-doping in ZnO system to act as potential candidates for the optoelectronic and spintronic applications. Elsevier 2018 Article PeerReviewed Basri, Siti Hajar and Abd Majid, Wan Haliza and Talik, Noor Azrina and Sarjidan, Mohd Arif Mohd (2018) Tailoring electronics structure, electrical and magnetic properties of synthesized transition metal (Ni)-doped ZnO thin film. Journal of Alloys and Compounds, 769. pp. 640-648. ISSN 0925-8388 https://doi.org/10.1016/j.jallcom.2018.08.056 doi:10.1016/j.jallcom.2018.08.056
institution	Universiti Malaya
building	UM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Malaya
content_source	UM Research Repository
url_provider	http://eprints.um.edu.my/
topic	Q Science (General) QC Physics
spellingShingle	Q Science (General) QC Physics Basri, Siti Hajar Abd Majid, Wan Haliza Talik, Noor Azrina Sarjidan, Mohd Arif Mohd Tailoring electronics structure, electrical and magnetic properties of synthesized transition metal (Ni)-doped ZnO thin film
description	Improving Zinc Oxide (ZnO) conductivity is in dire need due to its major shortcoming of high resistivity as a result of low carrier concentration. In this work, ZnO was doped with a transition metal, Nickel (Ni) in different concentrations (1 mol%, 2 mol%, 3 mol%, and 4 mol%) and the influence of Ni concentrations in ZnO thin film in term of electrical, electronic structure as well as magnetic properties were investigated. ZnO thin films with Ni-doping were successfully produced via a sol-gel spin coating method. High-Resolution Transmission Electron Microscopy (HR-TEM) image observed for 3 mol% Ni:ZnO thin film shows clear and coherent lattice fringes in hexagonal shape with the amorphous structure inside. The resistivity of Ni:ZnO films show to decrease with the addition of Ni-doping down to 1.7 × 10−1 Ω cm, whilst the conductivity and the carrier concentration improved from 0.28 Sm-1 to 5.87 Sm-1 and 2.23 × 1014 cm−3 to 485.14 × 1014 cm−3 respectively. Thermal dependence activation energy (Ea) of ZnO thin film is found to be 1.3 eV and increases up to 15.1 eV above 373 K. X-ray Photoemission Spectroscopy/Ultraviolet Photoemission Spectroscopy (XPS/UPS) spectra indicate that Ni-doped ZnO induced more surface defects and native defects in the ZnO system. In addition to that, photoluminescence spectra show that Vo and Zni induced shallow donor in the system. Finally, via Vibrating Sample Magnetometery (VSM) measurement, it is revealed that the ferromagnetism of Ni:ZnO might be induced by the co-existence of Vo and Zni defects. These results may open an attractive path to tailor Ni-doping in ZnO system to act as potential candidates for the optoelectronic and spintronic applications.
format	Article
author	Basri, Siti Hajar Abd Majid, Wan Haliza Talik, Noor Azrina Sarjidan, Mohd Arif Mohd
author_facet	Basri, Siti Hajar Abd Majid, Wan Haliza Talik, Noor Azrina Sarjidan, Mohd Arif Mohd
author_sort	Basri, Siti Hajar
title	Tailoring electronics structure, electrical and magnetic properties of synthesized transition metal (Ni)-doped ZnO thin film
title_short	Tailoring electronics structure, electrical and magnetic properties of synthesized transition metal (Ni)-doped ZnO thin film
title_full	Tailoring electronics structure, electrical and magnetic properties of synthesized transition metal (Ni)-doped ZnO thin film
title_fullStr	Tailoring electronics structure, electrical and magnetic properties of synthesized transition metal (Ni)-doped ZnO thin film
title_full_unstemmed	Tailoring electronics structure, electrical and magnetic properties of synthesized transition metal (Ni)-doped ZnO thin film
title_sort	tailoring electronics structure, electrical and magnetic properties of synthesized transition metal (ni)-doped zno thin film
publisher	Elsevier
publishDate	2018
url	http://eprints.um.edu.my/22337/ https://doi.org/10.1016/j.jallcom.2018.08.056
_version_	1646210212556701696
score	13.211869

Tailoring electronics structure, electrical and magnetic properties of synthesized transition metal (Ni)-doped ZnO thin film

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