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Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient

The effects of oxidation/nitridation for 15 min at different temperatures (300–800 °C) on metal–oxide–semiconductor characteristics of sputtered Zr thin film based on Ge substrate in N2O ambient have been systematically investigated. The crystallinity of the film were evaluated by X-ray diffraction...

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Main Authors: Lei, Zhen Ce, Zainal Abidin, Nor Ishida, Wong, Yew Hoong
Format: Article
Published: Springer 2018
Subjects:
TJ Mechanical engineering and machinery
Online Access:http://eprints.um.edu.my/21491/
https://doi.org/10.1007/s10854-018-9408-2
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spelling my.um.eprints.214912019-06-17T08:18:44Z http://eprints.um.edu.my/21491/ Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient Lei, Zhen Ce Zainal Abidin, Nor Ishida Wong, Yew Hoong TJ Mechanical engineering and machinery The effects of oxidation/nitridation for 15 min at different temperatures (300–800 °C) on metal–oxide–semiconductor characteristics of sputtered Zr thin film based on Ge substrate in N2O ambient have been systematically investigated. The crystallinity of the film were evaluated by X-ray diffraction analysis, Raman analysis, and X-ray photoelectron spectrometer. The crystallite size and microstrain of film were estimated by Williamson–Hall plot analysis. Optical microscope was used to examine samples surface condition and high-resolution transmission electron microscopy was carried out to investigate the cross-sectional morphology. GeO2 was detected in samples with oxidation/nitridation temperature above 700 °C. A possible mechanism of Ge atomic diffusion and its rearrangement in ZrO2 has been proposed and explicated. Springer 2018 Article PeerReviewed Lei, Zhen Ce and Zainal Abidin, Nor Ishida and Wong, Yew Hoong (2018) Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient. Journal of Materials Science: Materials in Electronics, 29 (15). pp. 12888-12898. ISSN 0957-4522 https://doi.org/10.1007/s10854-018-9408-2 doi:10.1007/s10854-018-9408-2
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic TJ Mechanical engineering and machinery
spellingShingle TJ Mechanical engineering and machinery
Lei, Zhen Ce
Zainal Abidin, Nor Ishida
Wong, Yew Hoong
Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient
description The effects of oxidation/nitridation for 15 min at different temperatures (300–800 °C) on metal–oxide–semiconductor characteristics of sputtered Zr thin film based on Ge substrate in N2O ambient have been systematically investigated. The crystallinity of the film were evaluated by X-ray diffraction analysis, Raman analysis, and X-ray photoelectron spectrometer. The crystallite size and microstrain of film were estimated by Williamson–Hall plot analysis. Optical microscope was used to examine samples surface condition and high-resolution transmission electron microscopy was carried out to investigate the cross-sectional morphology. GeO2 was detected in samples with oxidation/nitridation temperature above 700 °C. A possible mechanism of Ge atomic diffusion and its rearrangement in ZrO2 has been proposed and explicated.
format Article
author Lei, Zhen Ce
Zainal Abidin, Nor Ishida
Wong, Yew Hoong
author_facet Lei, Zhen Ce
Zainal Abidin, Nor Ishida
Wong, Yew Hoong
author_sort Lei, Zhen Ce
title Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient
title_short Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient
title_full Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient
title_fullStr Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient
title_full_unstemmed Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient
title_sort structural, chemical, and electrical properties of zro2/ge system formed via oxidation/nitridation in n2o gas ambient
publisher Springer
publishDate 2018
url http://eprints.um.edu.my/21491/
https://doi.org/10.1007/s10854-018-9408-2
_version_ 1643691579279409152
score 13.211869

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